Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100 nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process shows good robustness and bonding strength, with a break-down shear stress of 2 MPa. The process can be scaled-up to a multiple die-towafer bonding procedure. Silicon photonics, based on the silicon-on-insulator (SOI) material platform, is considered as the technology of choice for the integration of photonic devices with microelectronic circuits. However, the fabrication of efficient light sources in silicon photonics is challenging due to silicon's indirect bandgap. Heterogeneous integration, achieved through the bonding of III-V semiconductor materials on a SOI platform, is the most promising approach to address this problem. Among several schemes to couple the light from the III-V active medium into the SOI waveguide, 1 evanescent optical coupling is the most promising one and requires no additional coupling structures, 2 although the active material and the silicon waveguide need to be within several hundred nanometers. Several evanescent hybrid III-V/ Si lasers based on direct bonding were reported, 2-5 but this technique is very sensitive to surface topography, contamination or presence of particles and may not be sufficiently robust for industrial-scale fabrication where such strict requirements are difficult to meet.Compared to direct bonding, adhesive bonding is more tolerant to surface topography and particle contamination. It has been used for hybrid integration of photonic and electronic circuits.6 Both thermoplastic polymers, like SU-8 7 and thermosetting polymers, such as polyimide and BCB, 8 are used as adhesives. Our heterogeneous integration scheme assumes bonding unprocessed III-V dies on top of pre-patterned SOI waveguide circuits (see Fig. 1a). Precise bonding alignment is not required since the III-V dies are processed after the bonding. Post-bonding thermal budget should allow 350 C processing of the III-V components. Therefore, a thermosetting polymer, divinylsiloxane-bis-benzocyclobutene (DVS-BCB), also referred to as BCB, was chosen. It is a well-known material that is used both for wafer-to-wafer 8 and die-to-wafer bonding processes. 9 Recently, the fabrication of evanescently-coupled photodetectors, 10 hybrid III-V/Si lasers 11 and several other photonics devices 12 using BCB bonding has been demonstrated, but in these cases, a manual bonding procedure was used. This resulted in a difficult-to-control bonding procedure, which prevents scaling-up to an industrial-level fabrication. In this paper, we report a machine-based BCB bonding process providing thin bonding layers (<100 nm), suitable for the fa...