1993
DOI: 10.4028/www.scientific.net/kem.89-91.483
|View full text |Cite
|
Sign up to set email alerts
|

Nucleation and Growth of Si<sub>2</sub>N<sub>2</sub>O in Si<sub>3</sub>N<sub>4</sub>-Materials Employing Different Sintering Additives

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

2
5
0

Year Published

1998
1998
2020
2020

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(7 citation statements)
references
References 0 publications
2
5
0
Order By: Relevance
“…This is consistent with the observation that ␣-Si 3 N 4 particles trapped in Si 2 N 2 O also serve as nucleation sites for Si 2 N 2 O. 15 The nucleation rate, or the probability that an embryo will attain a size which is bigger than a critical dimension for growth, depends on the degree of supersaturation of the liquid with (Si,O,N), in terms of n v in A and the viscosity locally surrounding that embryo, as seen from Eq. (2).…”
Section: (1) Microstructural Evolutionsupporting
confidence: 92%
See 3 more Smart Citations
“…This is consistent with the observation that ␣-Si 3 N 4 particles trapped in Si 2 N 2 O also serve as nucleation sites for Si 2 N 2 O. 15 The nucleation rate, or the probability that an embryo will attain a size which is bigger than a critical dimension for growth, depends on the degree of supersaturation of the liquid with (Si,O,N), in terms of n v in A and the viscosity locally surrounding that embryo, as seen from Eq. (2).…”
Section: (1) Microstructural Evolutionsupporting
confidence: 92%
“…Si 2 N 2 O heterogeneously nucleates on ␤-Si 3 N 4 surfaces; thus it may be generally expected that there exists an epitaxial or a specific orientation relationship between ␤-Si 3 N 4 and Si 2 N 2 O. Based on morphological observations, Huang et al 18 15 also claim that trapping of ␣-Si 3 N 4 in Si 2 N 2 O is associated with heterogeneous nucleation of Si 2 N 2 O from the surface of ␣-Si 3 N 4 , and they have deduced a possible topotactical orientation relationship between ␣-Si 3 N 4 and Si 2 N 2 O. However, detailed examination of the crystal structural features of both ␣and ␤-Si 3 N 4 and Si 2 N 2 O indicates that, in excess of the dimensions of several Si-N rings, epitaxial bonding of Si 2 N 2 O on either ␣or ␤-Si 3 N 4 is impossible, because the bond angle will not match for long ranges.…”
Section: (2) Implications Of the Partial Ordering Of The Grain Boundamentioning
confidence: 99%
See 2 more Smart Citations
“…Heterogeneous nucleation was described in the literature both for ␣ -SiAlON on ␣-Si 3 N 4 29 and ␤ -SiAlON on ␤-Si 3 N 4 . 30 Braue et al 31 reported on the heterogeneous epitaxy of silicon oxinitride, Si 2 N 2 O, on ␣-Si 3 N 4 .…”
Section: Introductionmentioning
confidence: 99%