Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111)

Jnawali, Giriraj; Wagner, Thorsten; Hattab, H.; Möller, R.; Hoegen, M. Horn‐von

doi:10.1103/physrevb.79.193306

Cited by 7 publications

(6 citation statements)

References 23 publications

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“…For simplicity, we normalize the units for the deposition rate and coverage, i.e., f = 1 and the coverage θ = f t = t. Equations 3 and 4 are solved numerically to obtain adatom and island densities. The calculated island density n i exhibits a cubic-root behavior with coverage in agreement with a previous study on sub monolayer Bi growth [25].…”

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confidence: 90%

“…2(b) and plotted in (d) allows us to determine the the typical wavelength at the Fermi energy to be λ F = 2.4 nm. This is considerably larger than the island size D obtained from experimental data [19,25]. It also exceeds by far the island size obtained from our calculations, which increases from 2 to 13 atoms in the range shown in Fig.…”

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confidence: 70%

“…To introduce scattering centers in a controlled fashion, additional Bi was deposited on the Bi film at 80 K, leading to surface roughness in the form of adatoms and small 2D Bi islands [25]. The induced additional scattering manifestes itself through a pronounced increase of the resistivity as shown in Fig.…”

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confidence: 99%

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Manipulation of Electronic Transport in the Bi(111) Surface State

et al. 2012

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We demonstrate the controlled manipulation of the 2D-electronic transport in the surface state of Bi(111) through the deposition of small amounts of Bi to generate adatoms and 2D islands as additional scatterers. The corresponding increase in resistance is recorded in situ and in real time. Model calculations based on mean-field nucleation theory reveal a constant scattering efficiency of adatoms and of small 2D Bi islands, independent of their size. This finding is supported by a detailed scanning tunneling microscopy and spectroscopy study at 5 K which shows a highly anisotropic scattering pattern surrounding each surface protrusion.

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Manipulation of Electronic Transport in the Bi(111) Surface State

et al. 2012

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“…1(a) shows that the Bi layer grows as triangular islands. 29 At certain coverage, these islands form a percolation network and the second layer starts to nucleate before the first layer completes. The height and the lateral unit cell of the islands were measured as ∼0.6 and ∼0.45 nm, respectively, corresponding well to those of a single Bi(111) BL.…”

Section: Resultsmentioning

confidence: 99%

Edge and interfacial states in a two-dimensional topological insulator: Bi(111) bilayer onBi2Te2Se

et al. 2014

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The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi2Te2Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi2Te2Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi2Te2Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

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“…In a STM study [27] of the nucleation regime of Bi on Bi(111) it was shown that the island density n x increases with the cubic root of Bi coverage n x ∼ Θ 1/3 . Thus the average island size increases as A x ∼ Θ/n x ∼ Θ 2/3 and the average perimeter as p x ∼ A 1/2 x ∼ Θ 1/3 .…”

Section: Low Coverage Regime (<05 Bl)mentioning

confidence: 99%

Two-Dimensional Electron Transport and Scattering in Bi(111) Surface States

Jnawali

Wagner

Hattab

et al. 2010

e-J. Surf. Sci. Nanotechnol.

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The Bi(111) surface exhibits a pronounced surface state which acts as dominant transport channel for electric current. We performed in situ four-point probe resistance measurements for thin Bi(111) films on Si(001) to study electron scattering effects in this two-dimensional (2D) electron gas. The surface morphology was manipulated by additional deposition of Bi at 80 K. A linear increase of surface resistance was measured at extremely low coverage of less than 1 % of a bilayer (BL) and the slope gradually decreases with coverage up to about 0.5 BL. This behavior was qualitatively explained applying a simple picture of electron scattering at adatoms or small islands during the early stages of growth in Bi(111) homoepitaxy. Beyond 0.5 BL resistance changes periodically showing an antiphase correlation with roughness-induced LEED (00)-spot intensity oscillations, indicating the scattering of electrons at island edges.

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Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111)

Cited by 7 publications

References 23 publications

Manipulation of Electronic Transport in the Bi(111) Surface State

Manipulation of Electronic Transport in the Bi(111) Surface State

Edge and interfacial states in a two-dimensional topological insulator: Bi(111) bilayer onBi2Te2Se

Two-Dimensional Electron Transport and Scattering in Bi(111) Surface States

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