Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

Abstract

Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires Appl. Phys. Lett. 98, 152103 (2011); 10.1063/1.3579251Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots

MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics

“…In the extreme case of InAs on GaAs the transition occurs near 1.5 ML. We have previously shown that the surface stoichiometry is a key factor controlling the growth mode [26][27][28]. Indeed, MBE growth under slightly In-stable conditions totally prevents the 2D-3D transition as confirmed by the RHEED patterns given in Fig.…”

Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy

“…In the remaining samples the electron mobility shows a strong decreasing trend with increased V-III ratio. A study of InAs growth on GaAs by MBE has shown that growth carried out under conditions leading to In-stable reconstruction results in higher quality bulk InAs material [15,16]. This finding suggests that lower arsenic to indium ratio will produce InAs crystallites that are closer to stoichiometric, and this accounts for the higher mobility at lower V-III ratios.…”

Effective-mass theory for InAs/GaAs strained coupled quantum dots

“…5,6 The growth of highly strained semiconductor layer ͑InAs, In x Ga 1Ϫx As͒ onto a substrate ͑GaAs, InP͒ could lead to the spontaneous formation of semiconductor nanometer-scale clusters. [7][8][9][10][11][12][13] Very sharp emission lines from InAs/GaAs heterostructures prepared from this method have been observed recently, [14][15][16] directly representing the ␦-function-like density of states in the zero-dimensional system. P. D. Wang et al 17 studied the optical properties of InAs/ GaAs heterostructures with InAs average layer thickness ranging from 1 Å ͑one-third of a ML͒ to 4 ML grown on ͑100͒ and ͑311͒ surfaces.…”