Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

Claverie, A.; Giles, L.F.; Omri, M.; Mauduit, B. de; Assayag, Gérard; Mathiot, D.

doi:10.1016/s0168-583x(98)00617-x

Cited by 81 publications

(32 citation statements)

References 19 publications

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“…Special attention was given to transient-enhanced diffusion ͑TED͒ of dopants, which happens during the initial stages of postimplantation annealing, and it was correlated to the evolution of linear and planar defects during annealing at different temperatures and times. [7][8][9][10][11] Systematic studies [12][13][14][15][16][17][18][19][20] of nucleation, growth, and transformation of these defects, performed with the aim to understand and possibly minimize or eliminate their effects, are now useful if they are to be produced deliberately. As ion implantation increases local density, the induced defects are extrinsic in nature, and the dislocation loops that are formed are interstitial.…”

Section: Introductionmentioning

confidence: 99%

“…12-14 The majority of studies reported in the literature are concerned with category II damage, when ion implantation forms an amorphous layer in silicon. Preamorphization of silicon ͑prior to implantation of boron͒ was carried out with heavier ions, such as Si or Ga. 10,11 The defects that form during annealing are so called "end of range" ͑EOR͒ defects because they originate from the initial amorphous/crystalline interface. For similar heat treatments they consist also of rodlike defects and faulted and perfect dislocation loops, but they are located deeper in the substrate than category I defects, and the dislocation loops are considerably smaller.…”

Section: Introductionmentioning

confidence: 99%

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Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Milosavljević

Shao

Lourenço

et al. 2005

Journal of Applied Physics

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We have studied the role of boron ion energy in the engineering of dislocation loops for silicon light-emitting diodes ͑LEDs͒. Boron ions from 10 to 80 keV were implanted in ͑100͒ Si at ambient temperature, to a constant fluence of 1 ϫ 10 15 ions/ cm 2 . After irradiation the samples were annealed for 20 min at 950°C by rapid thermal annealing. The samples were analyzed by transmission electron microscopy and Rutherford backscattering spectroscopy. It was found that the applied ion implantation/thermal processing induces interstitial perfect and faulted dislocation loops in ͕111͖ habit planes, with Burgers vectors a /2͗110͘ and a /3͗111͘, respectively. The loops are located around the projected ion range, but stretch in depth approximately to the end of range. Their size and distribution depend strongly on the applied ion energy. In the 10 keV boron-implanted samples the loops are shallow, with a mean size of ϳ30 nm for faulted loops and ϳ75 nm for perfect loops. Higher energies yield buried, large, and irregularly shaped perfect loops, up to ϳ500 nm, coexisting with much smaller faulted loops. In the latter case much more Si interstitials are bounded by the loops, which are assigned to a higher supersaturation of interstitials in as-implanted samples, due to separated Frenkel pairs. An interesting phenomenon was found: the perfect loops achieved a steady-state maximum size when the ion energy reached 40 keV. Further increase of the ion energy only increased the number of these large loops and made them bury deeper in the substrate. The results of this work contribute to laying a solid ground in controlling the size and distribution of dislocation loops in the fabrication of silicon LEDs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Milosavljević

Shao

Lourenço

et al. 2005

Journal of Applied Physics

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“…An important contribution of the work in Refs. [25][26][27] was to unambiguously demonstrate that the supersaturation of self-interstitials present during TED resulted from a complex combination Ostwald ripening of clusters, out-diffusion of self-interstitials to the wafer surface, and a thermodynamic competition between the various possible cluster morphologies. Earlier studies suggested that the sole source of the excess silicon self-interstitials are dissolving ͕113͖-oriented planar defects formed during the post-implant annealing, which first grow to some maximum size then dissolve during annealing to release mobile Si self-interstitials.…”

Section: Introductionmentioning

confidence: 99%

“…The work in Refs. [25][26][27], however, shows that TED is operational even during cluster ripening ͑growth͒ and that it is the supersaturation of single self-interstitials in the vicinity of the clusters that is maintained by the Gibbs-Thompson effect which is responsible for TED. Moreover, it was demonstrated that a quantitative description of the ripening dynamics required that several different cluster morphologies be considered, all of which have been observed experimentally in ion-implanted silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Detailed microscopic analysis of self-interstitial aggregation in silicon. I. Direct molecular dynamics simulations of aggregation

Kapur

Sinno

2010

Phys. Rev. B

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A comprehensive atomistic study of self-interstitial aggregation in crystalline silicon is presented. Here, largescale parallel molecular dynamics simulations are used to generate time-dependent views into the selfinterstitial clustering process, which is important during post-implant damage annealing. The effects of temperature and pressure on the aggregation process are studied in detail and found to generate a variety of qualitatively different interstitial cluster morphologies and growth behavior. In particular, it is found that the self-interstitial aggregation process is strongly affected by hydrostatic pressure. {111}-oriented planar defects are found to be dominant under stress-free or compressive conditions while {113} rodlike and planar defects are preferred under tensile conditions. Moreover, the aggregation pathways for forming the different types of planar defect structures are found to be qualitatively different. In each case, the various cluster morphologies generated in the simulations are found to be in excellent agreement with structures previously predicted from electronic-structure calculations and observed experimentally by electron microscopy. Multiple empirical interatomic potential models were employed and found to generally provide similar results leading to a fairly consistent picture of self-interstitial aggregation. In a companion article, a detailed thermodynamic analysis of various cluster configurations is employed to probe the mechanistic origins of these observations. A comprehensive atomistic study of self-interstitial aggregation in crystalline silicon is presented. Here, large-scale parallel molecular dynamics simulations are used to generate time-dependent views into the selfinterstitial clustering process, which is important during post-implant damage annealing. The effects of temperature and pressure on the aggregation process are studied in detail and found to generate a variety of qualitatively different interstitial cluster morphologies and growth behavior. In particular, it is found that the self-interstitial aggregation process is strongly affected by hydrostatic pressure. ͕111͖-oriented planar defects are found to be dominant under stress-free or compressive conditions while ͕113͖ rodlike and planar defects are preferred under tensile conditions. Moreover, the aggregation pathways for forming the different types of planar defect structures are found to be qualitatively different. In each case, the various cluster morphologies generated in the simulations are found to be in excellent agreement with structures previously predicted from electronic-structure calculations and observed experimentally by electron microscopy. Multiple empirical interatomic potential models were employed and found to generally provide similar results leading to a fairly consistent picture of self-interstitial aggregation. In a companion article, a detailed thermodynamic analysis of various cluster configurations is employed to probe the mechanistic origins of these observations. Discip...

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“…In particular, extra self-interstitials (I) released both from {311} rodlike defects [1] and small clusters [2] cause the Transient Enhanced Diffusion (TED) of commonly used dopants. Four types of selfinterstitial extended defects have been detected experimentally in silicon: [3] small irregular clusters, {311} defects, and faulted and perfect dislocation loops (DLs). All of these defects are of extrinsic character, i.e.…”

Section: Introductionmentioning

confidence: 99%

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

Martín-Bragado

Avci

Zographos

et al. 2007

ESSDERC 2007 - 37th European Solid State Device Research Conference

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Abstract-An atomistic model for self-interstitial extended defects is presented in this work. Using a limited set of assumptions about the shape and emission frequency of extended defects, and taking as parameters the interstitial binding energies of extended defects versus their size, this model is able to predict a wide variety of experimental results. The model accounts for the whole extended defect evolution, from the initial small irregular clusters to the {311} defects and to the more stable dislocation loops. The model predicts the extended defect dissolution, supersaturation and defect size evolution with time, and it takes into account the thermally activated transformation of {311} defects into dislocation. The model is also used to explore a two-phase exponential decay observed in the dissolution of {311} defects.

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Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

Cited by 81 publications

References 19 publications

Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Detailed microscopic analysis of self-interstitial aggregation in silicon. I. Direct molecular dynamics simulations of aggregation

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

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