Nucleation of AlN on SiC substrates by seeded sublimation growth

Lü, Peng; Edgar, James H.; Lee, R.G.; Chaudhuri, J.

doi:10.1016/j.jcrysgro.2006.11.324

Cited by 11 publications

(9 citation statements)

References 22 publications

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“…It has been observed also by other researcher [8] that the growth of AlN on SiC substrate is accompanied by the appearance of HHs. HHs size increased with increasing temperature and decreasing N 2 pressure.…”

Section: Microrod and Free-standing Growthsupporting

confidence: 58%

Fabrication of free-standing AlN crystals by controlled microrod growth

Yazdi

Vasiliauskas

Syväjärvi

et al. 2008

Journal of Crystal Growth

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Section: Microrod and Free-standing Growthsupporting

confidence: 58%

Fabrication of free-standing AlN crystals by controlled microrod growth

Yazdi

Vasiliauskas

Syväjärvi

et al. 2008

Journal of Crystal Growth

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“…Furthermore, impurity incorporation and intrinsic defect formation are known to depend on the facet on which growth proceeds [35]. Thus, seeds of different crystallographic orientation are employed, namely with  = 0°, 23°, 32°, and 42° off-orientation angle in respect to the c-axis towards the m-plane normal, so that their surfaces approximately correspond to Al-polar (0001), (10)(11)(12)(13)(14), (10)(11)(12)(13), and (10-12) AlN planes. In the second set of experiments, small pieces of single-crystalline SiC or carbon are placed on top of the AlN source material, intended to provide an additional and constant supply of silicon and carbon species during growth.…”

Section: Crystal Growthmentioning

confidence: 99%

Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties

Bickermann

Filip²,

Epelbaum³

et al. 2012

Journal of Crystal Growth

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Highlights:-Different growth conditions used to control SiC incorporation in AlN bulk growth -Phonon energies and band-gap of the crystals close to 'pure AlN' -Deep-UV opacity regardless of silicon and carbon content -Two types of samples with very different absorption and luminescence -No pseudo-binary alloy, but highly compensated, Si/C co-doped AlN Abstract AlN single crystals are grown by physical vapor transport (PVT) in sintered TaC crucibles in the presence of SiC, i.e. by seeding on 6H-SiC or by adding SiC to the AlN source material. Different growth conditions, i.e. growth temperatures T = 1900-2050°C and off-orientation angles in respect to [0001]  = 0-42°, are applied in order to investigate to which extent the incorporation of Si and/or C can be controlled during PVT growth. Chemical analysis is performed by energy-dispersive X-ray analysis (EDX), secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The grown crystals are significantly contaminated with Si and C in the range of several atomic percents, but they do not represent pseudo-binary AlN-SiC solid solutions. Samples cut from these crystals are probed by Raman micro-spectroscopy, optical absorption, cathodoluminescence (CL), and near band-gap photoluminescence (PL) in order to evaluate the crystal properties. All crystals exhibit phonon bands at the positions of AlN phonon energies, and a low-temperature band-gap exceeding 5.8 eV, which is only slightly lower than the band-gap of pure AlN. On the other hand, the samples show very different optical properties below the band-gap, including coloration. As the changes in optical properties do not correlate to chemical analysis, we suggest that self-compensation of silicon 2 and carbon as well as formation of intrinsic defects lead to a complex compensation scenario in the samples. The grown crystals are thus to be considered as highly compensated, Si/C co-doped AlN.

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“…This work builds on the author's previous investigation into the initial growth stage of AlN on SiC [20], which established the optimum growth temperature of AlN as 1830-1850 1C, based on 20-30 mm thick single-crystalline AlN films grown on 81 off-axis 4H-SiC and on-axis 6H-SiC. The off-axis-grown film consisted of regular step features on the surface, while the on-axis-grown film contained hexagonal sub-grains of varying sizes.…”

Section: Introductionmentioning

confidence: 99%