Nucleation of β-FeSi2 nanostructures at pinned step bunches on the Si(111) surface

Brady, Ryan P.; Sharma, Amit; Giblet, R.; Cottier, Ryan; Golding, T. D.; Pérez, Jose

doi:10.1063/1.1940128

Cited by 6 publications

(4 citation statements)

References 19 publications

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“…The steps are mostly straightforward and partly dog-leg shaped. The dog-leg shaped part is produced possibly due to the step pinning by impurities or contaminants as observed for example by Latyshev et al 13) and Brady et al 14) These characteristics in steps and terraces are similar to the substrate surface before RDE (not shown), indicating that the step-terrace structure is not strongly influenced by RDE for 1 min. The deposited Ba atoms amount to about 2-3 monolayers until 1 min of RDE, assuming the bcc structure of Ba with the close-packed {110} plane parallel to the surface.…”

Section: Resultsmentioning

confidence: 63%

“…The nucleation of -FeSi 2 through the solid state reaction of Fe and Si of the vicinal substrate is reported to start at the pinned step bunches, or terrace edges. 14,19) The nucleation of BaSi 2 on the 4 -inclined substrate may be similar to -FeSi 2 . In that case, the orientation of BaSi 2 may not be strongly influenced by the atomic structure of the step edge.…”

Section: Resultsmentioning

confidence: 99%

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Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

Hara

Usami

Toh

et al. 2012

Jpn. J. Appl. Phys.

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The domain structure of BaSi2 epitaxial films grown on vicinal Si(111) substrates has been studied in order to fabricate high-quality BaSi2 crystals with large domains. The X-ray pole figure measurement shows that the BaSi2 films grown on vicinal substrates as well as the on-axis substrate consist of three epitaxial variants which are equivalent in terms of 60° in-plane rotations, and that one of the variants is dominant in the film grown on the 2°-inclined substrate. The orientation maps produced by electron backscatter diffraction show that the domains with the b axis parallel to the miscut direction are larger than the others in the film grown on the 2°-inclined substrate, while the domain sizes of three variants are found similar in the films grown on the on-axis and 4°-inclined substrates. The possible origin of the large domain formation is discussed with the focus on the initial growth stage observed by atomic force microscopy. Nucleation from the step edge is proposed as the mechanism of the large-domain formation considering the lattice matching to the step edge, while nucleation is suggested to occur at the terrace edges on the 4°-inclined substrate.

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Section: Resultsmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 99%

Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

Hara

Usami

Toh

et al. 2012

Jpn. J. Appl. Phys.

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“…6a. This step configuration is often observed when an immovable object such as an impurity or contamination acts as a pinning site of steps, limiting their movement [15,16]. Materials other than Si and Mn were below the detection limit of the CAICISS spectrum.…”

Section: Resultsmentioning

confidence: 94%

Growth process and surface structure of MnSi on Si(111)

et al. 2009

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“…Therefore, besides thin film growth, the fabrication possibility of wires [20][21][22][23] and dots [13,[24][25][26][27][28][29][30][31] at the nanometre scale composed of iron silicide is of great interest. Such objects can be used as building blocks for optoelectronic circuits such as lasers, light-emitting diodes and sensors [2,32,33].…”

Section: Introductionmentioning

confidence: 99%

The solid state reaction of Fe with the Si(111) vicinal surface: splitting of bunched steps

Wawro¹,

Suto²,

Czajka³

et al. 2008

Nanotechnology

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The solid state reaction of deposited Fe (four monolayers, ML) with vicinal Si(111) substrate induced by subsequent thermal treatment has been studied using scanning tunnelling microscopy. At the lower range of annealing temperatures up to 400 °C the bunched steps of bare substrate are reproduced by the surface of the covering iron silicide layer. At 400 °C the onset of three-dimensional growth of iron silicide islands is observed. In comparison to the samples covered with smaller amounts of Fe it appears at a lower annealing temperature. Above 500 °C the bunched steps split into lower ones but more densely distributed due to proceeding reactions between Fe-rich iron silicide and Si substrate. As a consequence, at 700 °C the well-developed three-dimensional nanocrystallites of iron silicide are randomly distributed on the Si surface. This observation is in contrast to the formation of a regular array of iron silicide crystallites upon deposition of 2 ML of Fe.

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Nucleation of β-FeSi2 nanostructures at pinned step bunches on the Si(111) surface

Cited by 6 publications

References 19 publications

Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

Growth process and surface structure of MnSi on Si(111)

The solid state reaction of Fe with the Si(111) vicinal surface: splitting of bunched steps

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