Numerical analysis and optimization of Cu2O/TiO2, CuO/TiO2, heterojunction solar cells using SCAPS

Sawicka-Chudy, Paulina; Sibiński, Maciej; Wisz, G.; Rybak-Wilusz, E.; Cholewa, M.

doi:10.1088/1742-6596/1033/1/012002

Cited by 60 publications

(31 citation statements)

References 35 publications

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“…The reason is the low propagation length and reflectivity. In addition, the absorption becomes zero at long wavelengths because the quantum efficiency is inversely proportional to the wavelength, according to the relationship R λ (W/A) [29]. The third case was when adding a layer of BSL, where the efficiency was 52% at wavelength of 100 nm and then increased until it reaches 98% at 370 nm , then started gradually to decrease reaching zero at 1250 nm .…”

Section: Quantum Efficiency (Qe)mentioning

confidence: 99%

Enhancement of the Efficiency of the CZTS/Cds/Zno/ITO Solar Cell By Back Reflection and Buffer Layers Using SCAPS -1D

Ganem

Saleh

2021

eijs

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CZTS / CdS / ZnO / ITO solar cell was studied using Solar Cell Capacitance Simulato-1D (SCAPS-1D) program. We performed an improvement on the theoretical cell by increasing the doping and thickness of some layers. As a result, the efficiency was shifted from 2.18% to 6.17% and several back reflection layers (BSL) were introduced on the enhanced cell until. We obtained a highest conversion efficiency of 13.99%. The best reflection layer (CZTSSe) was combined with the best buffer layer (CdSe), with thickness of 0.9µm, on the enhanced cell. Thereby, we obtained a cell with a conversion efficiency of 16.53%. A second improvement was made to the best obtained cell, where the CZTSSe with thickness of 0.05µm and the CdSe with thickness of 0.9µm were combined. Consequently, the efficiency was increased from 16.53% to 21.76%. By comparing the experimental results with those obtained with the program, it was found that the program simulates reality, i.e. the experimental and theoretical results matched.

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Section: Quantum Efficiency (Qe)mentioning

confidence: 99%

Enhancement of the Efficiency of the CZTS/Cds/Zno/ITO Solar Cell By Back Reflection and Buffer Layers Using SCAPS -1D

Ganem

Saleh

2021

eijs

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“…Several studies demonstrated the development of Cu2O/TiO2 p-n junctions as future candidate solar cells. However, the efficiency is still low and the best result was far away from the 20% of Cu2O theoretical limit [7][8][9] and 11% of TiO2 in dye-sensitized solar cells (DSSC) application [10]. According to Hussain et al, the lower efficiency of Cu2O/TiO2 heterojunction film is caused by the p-n junction interface defects, large lattice mismatch, rapid electron and hole pairs recombination rate and band discontinuity [5,11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of p-Cu2O on n-TiO2 Layer by Electrodeposition Method for Heterojunction Solar Cells Development

Ahmad

Mohamad

Azman

et al. 2021

J. Hum. Earth Future

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This study focused on the copper (I) oxide (Cu2O) that serves as an absorber layer, owing to its excellent optical properties, while titanium dioxide (TiO2) is a well-known material that has superior properties in solar cell development. In this work, the TiO2 nanorods layer was synthesised on a fluorine-doped tin oxide (FTO) glass substrate by a facile hydrothermal method followed by stacking the Cu2O layer using a low-cost electrodeposition method at different deposition times. Prior to deposition, a cyclic voltammetry (CV) measurement was performed, and the result showed that Cu2O films were successfully grown on the TiO2 nanorods layer with high uniformity. The crystallinity of the Cu2O/TiO2 film was increased when the deposition time was elevated. The strongest diffraction peak was detected in the sample deposited for 90 minutes. FE-SEM images revealed the formation of the pyramidal structure of Cu2O on the TiO2nanorod layer. The optical properties showed that the samples deposited at 60 minutes and above were red-shifted, with the estimated bandgap being slightly decreased when extending the deposition time. Meanwhile, the resistivity and sheet resistance of the as-prepared samples were increased. The performance of the solar cell was investigated, and the power energy conversion was slightly increased to 0.0267% for the heterojunction sample deposited at 90 minutes. Doi: 10.28991/HEF-2021-02-04-02 Full Text: PDF

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“…Copper oxide thin films are under the focus of research centers and industry sectors due to their wide range of applications. They are used as super capacitors, filed effect transistors (FET), solar cells, memory devices, and catalyst materials . CuO nanosheets which are prepared by the chemical bath deposition technique and were used as electrodes in supercapacitors displayed 464 F/g at 5 mV in a 1M Na 2 SO 4 electrolyte.…”

Section: Introductionmentioning

confidence: 99%

“…2 Moreover, CuO/TiO 2 solar cells are reported to have the potential for revealing an efficiency of 23% under one sun irradiation. 3 Furthermore, with the resistive switching characteristics, CuO memory devices are observed to switch from high resistance state to low resistance state regardless of the voltage polarity. The no polarity dependence of these memory devices makes them attractive for use as random access memory devices.…”

Section: Introductionmentioning

confidence: 99%

“…These features of the FET nominate them as promising for use in electronics . Moreover, CuO/TiO 2 solar cells are reported to have the potential for revealing an efficiency of 23% under one sun irradiation . Furthermore, with the resistive switching characteristics, CuO memory devices are observed to switch from high resistance state to low resistance state regardless of the voltage polarity.…”

Section: Introductionmentioning

confidence: 99%

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Thickness effects on the dielectric dispersion and optical conductivity parameters of CuO thin films

Qasrawi

Hamamdah

2019

Micro & Optical Tech Letters

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In this article, the effect of film thickness on the structural, optical, dielectric, and optical conductivity parameters of CuO thin films are reported. CuO thin films which are prepared by the physical vapor deposition technique under vacuum pressure of 10−5 mbar with various thicknesses in the range of 50 to 1000 nm are observed to exhibit amorphous nature of growth. The values of the energy bands gaps, the spectral response of the dielectric constant and of the optical conductivity parameters are highly sensitive to the film thickness. Particularly, while the 50 nm thick CuO films exhibits quantum confinement which forces the material to have wide band gap (2.70 eV), the thicker films display an energy band gap in the infrared range of spectrum. It was also observed that the thicker the films, the more pronounced the nonlinear dielectric response. In addition, analysis of the optical conductivity parameters using Drude‐Lorentz approach for optical conduction has shown that the 50 nm thick films can display drift mobility value of 4.65 cm2/Vs accompanied with plasmon frequency of 1.20 GHz and free carrier density of 7.5×1017 cm3. The Drude‐Lorentz analysis has also shown that the free carrier density and the plasmon frequency of CuO decreases with increasing film thickness. This decrement is accompanied with enhancement in the drift mobility values which reaches 12.56 cm2/V s as the film thickness exceeds 250 nm. Such features of the thin layer of CuO make them suitable for the production of nano/microthin film transistors.

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Numerical analysis and optimization of Cu₂O/TiO₂, CuO/TiO₂, heterojunction solar cells using SCAPS

Cited by 60 publications

References 35 publications

Enhancement of the Efficiency of the CZTS/Cds/Zno/ITO Solar Cell By Back Reflection and Buffer Layers Using SCAPS -1D

Enhancement of the Efficiency of the CZTS/Cds/Zno/ITO Solar Cell By Back Reflection and Buffer Layers Using SCAPS -1D

Fabrication and Characterization of p-Cu2O on n-TiO2 Layer by Electrodeposition Method for Heterojunction Solar Cells Development

Thickness effects on the dielectric dispersion and optical conductivity parameters of CuO thin films

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