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A power efficient circuit topology is proposed to implement a low-voltage CMOS 2-input pass-transistor XOR gate. This design aims to minimize power dissipation and reduce transistor count while at the same time reducing the propagation delay. The XOR gate utilizes six transistors to achieve a compact circuit design and was fabricated using the 130 nm IBM CMOS process. The performance of the XOR circuit was validated against other XOR gate designs through simulations using the same 130 nm CMOS process. The area of the core circuit is only about 56 sq · µm with 1.5659 ns propagation delay and 0.2312 nW power dissipation at 0.8 V supply voltage. The proposed six-transistor implementation thus compares favorably with other existing XOR gate designs.

Abstract-XOR and XNOR gate plays an important role in digital systems including arithmetic and encryption circuits. This paper proposes a combination of XOR-XNOR gate using 6-transistors for low power applications. Comparison between a best existing XOR-XNOR have been done by simulating the proposed and other design using 65nm CMOS technology in Cadence environment. The simulation results demonstrate the delay, power consumption and power-delay product (PDP) at different supply voltages ranging from 0.6V to 1.2V. The results show that the proposed design has lower power dissipation and has a full voltage swing.

The interest in utilizing natural fiber as reinforce in polymer composites has increased in recent years due to their advantages like availability, cheap, renewable, lightweight, and biodegradable. However, the main challenge of natural fiber to be used as reinforcement in polymer is their hydrophobic nature. One of the solutions is via chemical modification like mercerization treatment. In this study, the effect of alkali concentrations at 2 and 10 w/v %; and soaking temperature at 30°C and 80°C on a kenaf fiber bundles mean diameter was investigated. Untreated kenaf fiber was used as a control unit. Kenaf fiber diameter was measured using a Leica video analyzer. Microstructure change of kenaf fiber before and after mercerization treatment conditions was identified using JOEL scanning electron microscopy (SEM). Finally, an interaction of alkali treatment conditions on kenaf fiber bundles mean diameter value was statistically analyzed using a commercially available statistical software package. The results showed that kenaf fiber bundle mean diameter was reduced by 30.12% to 42.92% after mercerization treatment. From analysis of variance, the main effect of alkali concentration value was 6.075 and the temperature value was 1.135. The main effect plots reveal that alkali concentration had a higher impact on mean diameter changes compared to soaking temperature factor.