Numerical analysis of flared semiconductor laser amplifiers

Lang, Robert J.; Hardy, A.; Parke, R.; Mehuys, D.; O’Brien, S.; Major, J. S.; Welch, Dave

doi:10.1109/3.234467

Cited by 90 publications

(13 citation statements)

References 17 publications

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“…The role of thermal effects in the device characteristics is twofold: i) the overall heating of the device when driven in cw conditions decreases the modal gain, modifies the recombination rates (specially Auger recombination), and changes the internal distribution of carriers, producing an increase of the threshold current as in any other type of semiconductor laser; and ii) the lateral temperature profile induces a lateral index profile which changes the beam characteristics through the so-called thermal lensing effect. The second effect has been previously studied by numerical simulations in tapered amplifiers 19 and lasers 11,20 . Experimental results comparing cw and pulsed measurements in tapered lasers have been reported 11,21,22 .…”

Section: Role Of Thermal Effectsmentioning

confidence: 99%

Simulation of high brightness tapered lasers

Esquivias

Odriozola

Tijero

et al. 2010

Novel in-Plane Semiconductor Lasers IX

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Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi-3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyzed.

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Section: Role Of Thermal Effectsmentioning

confidence: 99%

Simulation of high brightness tapered lasers

Esquivias

Odriozola

Tijero

et al. 2010

Novel in-Plane Semiconductor Lasers IX

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“…18 After several nanoseconds the optical mode stabilizes, and the initial transients and relaxation oscillations die away. For this steady state condition, the optical power and the instantaneous and the time-averaged electric field data are recorded in a form of matrices.…”

Section: Modelmentioning

confidence: 98%

Tapered waveguide with parabolic lens: theory and experiment

et al. 2003

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Theoretical and experimental work to integrate parabolic intracavity lens into a high-power tapered ridge-waveguide semiconductor laser diode is carried out. A finite difference beam propagation model is used to simulate the laser operation with and without the lens. Focused ion-beam etching is used to integrate the lens with the laser cavity. The lens is designed to compensate for the phase curvature of the incident mode on the output facet. This leads to improved linearity in the lightcurrent characteristics of the device, showing an increase of up to 47% in power slope efficiency, 2-m broadening in near field pattern, and 1-deg narrowing in the far-field pattern.Subject terms: semiconductor laser diode; tapered waveguide; parabolic lens; finite difference beam propagation method; focused ion-beam etching.

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“…Finally, Equation 2.6 may be further specified recalling that our field is essentially paraxial (along z) and propagates in both the positive and negative directions [28,55,56]. The modal propagation constant is /?, and our field can be written as the sum of a forward and backward propagating mode:…”

Section: Forward and Backward Propagating Fieldsmentioning

confidence: 99%

“…This dependence is complicated, necessitating many interactions in order to solve explicitly. However, a common approximation accounts for carrier [16] and temperature [55] modification to the refractive index. Specifically, the change in the refractive index is approximated by [56]:…”

Section: Modulating the Refractive Indexmentioning

confidence: 99%

Finite aperture tapered unstable resonator lasers

Bedford¹

2003

Frontiers in Optics

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Numerical analysis of flared semiconductor laser amplifiers

Cited by 90 publications

References 17 publications

Simulation of high brightness tapered lasers

Simulation of high brightness tapered lasers

Tapered waveguide with parabolic lens: theory and experiment

Finite aperture tapered unstable resonator lasers

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