CdTe single crystal, were grown by the Modified Markov Method. We have introduced an insulating element between the furnace and the growth chamber, trying to minimize the radiation effects in the crystal. Numerical simulation of the heat transfer phenomena predict a reduction of the axial temperature gradient in the growth chamber, confirming by numerical experimental measurements, leading to a more uniform growth. An improvement in the surface morphology and in the crystal quality as well was achieved, evaluated by the combination of X-ray rocking curves, etch pit density determination and low temperature photoluminescence.