Numerical analysis of longwavelength extracted photodiodes

Piotrowski, J.; Jóźwikowska, A.; Jóźwikowski, K.; Ciupa, Robert

doi:10.1016/0020-0891(93)90112-k

Cited by 17 publications

(10 citation statements)

References 22 publications

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“…The one-dimensional (1-D) model incorporates electrical and optical material properties of HgCdTe from previously published models, [13][14][15][16] and Auger, Shockley-Read-Hall, and radiative generation-recombination mechanisms were included in the steady-state drift-diffusion model at all locations within the device. Specific equations and parameters used to calculate carrier lifetimes and recombination rates are detailed in the authors' previous work.…”

Section: Simulation Methodologymentioning

confidence: 99%

Design and Modeling of HgCdTe nBn Detectors

Itsuno

Phillips

Velicu

2011

Journal of Elec Materi

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An n-type mercury cadmium telluride (HgCdTe) unipolar nBn infrared detector structure is proposed as a means of achieving performance limited by intrinsic thermal carrier generation without requirements for p-type doping. Numerical modeling was utilized to calculate the current-voltage and optical response characteristics and detectivity values for HgCdTe nBn and p-n junction devices with a cut-off wavelength of 12 lm for temperatures between 50 K and 300 K. Calculations demonstrate similar dark current density, responsivity, and detectivity values within 10% for the long-wavelength infrared (LWIR) nBn detector compared with the p-n junction structure for temperatures from 50 K to 95 K. These results show that the HgCdTe nBn device may be a promising alternative for achieving high performance using a simplified device structure while circumventing issues related to p-type doping in current p-n junction technology such as achieving low, controllable doping concentrations, and serving as a basis for next-generation device structures.

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Section: Simulation Methodologymentioning

confidence: 99%

Design and Modeling of HgCdTe nBn Detectors

Itsuno

Phillips

Velicu

2011

Journal of Elec Materi

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“…The MUT's group is also known for detector modelling [20], studies of fundamental problems of the infrared detection [21] and, especially, for numerous Rogalski books and excellent review papers on infrared detectors [22][23][24][25][26][27][28][29].…”

Section: Research On Hg 1-x CD X Te and Related Ir Devicesmentioning

confidence: 99%

Uncooled infrared photodetectors in Poland

Piotrowski

2006

Opto-Electronics Review

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The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche.Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE.Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

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“…5 Comprehensive assessment of the behavior and performance improvements of the proposed Auger-suppressed HgCdTe infrared photodiodes (p + /m/n + structure) compared with equivalent state-of-the-art HgCdTe infrared double-layer planar heterojunction (DLPH) devices (p + /m structure) is presented herein. Past studies utilizing similar analytical and numerical simulations [6][7][8] have examined the electrical characteristics of various multilayer HgCdTe detectors; however, study of the differences and performance advantages of Auger-suppressed photodiodes over conventional p-n devices has not been reported. In this study, detector behavior is calculated for midwavelength infrared (MWIR) and long-wavelength infrared (LWIR) detectors with DLPH and HOT structures, and an analysis of predicted improvements in required operating temperatures is discussed.…”

Section: Introductionmentioning

confidence: 98%

MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements

Velicu

Grein

Emelie

et al. 2010

Journal of Elec Materi

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In this work, we analyze Auger suppression in HgCdTe alloy-based device structures and determine the operation temperature improvements expected when Auger suppression occurs. We identified critical material (absorber dopant concentration and minority-carrier lifetime) requirements that must be satisfied for optimal performance characteristics. Calculated detectivity values of Auger-suppressed and standard double-layer planar heterostructure (DLPH) devices demonstrate consistently higher maximum backgroundlimited temperatures over a range of cutoff wavelengths and generally higher detectivity values achieved by Auger-suppressed detectors. Furthermore, these devices can operate with comparable performance at up to 100 K higher than DLPH detectors operating at reference temperatures above 100 K. Results of these simulations demonstrate that Auger-suppressed detectors provide a significant advantage over DLPH devices for high-temperature operation and are a viable candidate for thermoelectrically cooled detectors. Experimental dark current-voltage (I-V) characteristics between 120 K and 300 K were fitted using numerical simulations. By fitting the temperaturedependent I-V experimental data, we determined that the observed negative differential resistance (NDR) is due to Auger suppression. More specifically, NDR is attributed to full suppression of Auger-1 processes and partial ($70%) suppression of Auger-7 processes. After Auger suppression, the remaining leakage current is principally limited by the Shockley-Read-Hall recombination component. Part of the leakage current is also due to a residual Auger-7 current in the absorber due to the extrinsic p-type doping level. Analysis and comparison of our theoretical and experimental device results in structures where Auger suppression was realized are also presented.

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Numerical analysis of longwavelength extracted photodiodes

Cited by 17 publications

References 22 publications

Design and Modeling of HgCdTe nBn Detectors

Design and Modeling of HgCdTe nBn Detectors

Uncooled infrared photodetectors in Poland

MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements

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