Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors

Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET

“…At first, we calculate the f T versus V GS for the three structures MOSCNT, LD-CNTFET and LDDS-CNTFET as discussed in [7], to select a structure with the highest cutoff frequency. Note that these three devices have intrinsic channel.…”

“…Figure 4 shows the energy band structures (solid line) and color-scaled plot for the number of electrons per unit energy for three discussed transistors at V DS = 0.4 V and V GS = -0.4 V. Figure 4a illustrates a large number of tunneling electrons that causes increase the leakage current, for the LDDS-CNTFET represented in Ref. [7]. Figure 4b shows the n-type impurity halo implanted in channel significantly decrease the probability of electrons tunneling, because the halo causes change answers of Schrodinger equation using create the nonuniform potential.…”

“…Moreover the p-type halo implanted deteriorates the cutoff frequency and the switching delay of CNTFET [12]. This paper is mainly focused on the f T of MOSCNT, linearly doped CNTFET (LD-CNTFET) and lightly doped drain and source CNTFET (LDDS-CNTFET), which are discussed in [7], to select a structure with the highest f T . Moreover, we have investigated the implantation of n-type single halo in channel of LDDS-CNTFET (SH-LDDS-CNTFET) and its effects on some characteristics such as the f T .…”

A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

“…One type of graphene nanoribbon-based field-effect transistors (GNRFETs) is metal oxide semicondutor (MOS)-like GNRFET [7][8][9][10]. In the MOS-like GNRFET, applying a gate voltage can reduce the potential barrier at the channel region, leading to flowing of carriers from the top of the barrier and reaching the drain side.…”

A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

“…In order to reduce off-current and am-bipolar behavior of the MOS-GNR(CNT)FETs, researchers have proposed various approaches such as use of linearly doped S/D regions [16], use of lightly doped S/D regions [17], electrically activated source and drain extension [18] and use of dual-gate structure with different work functions [19][20]. Taking advantage of the less troublesome approach of [19][20], we have proposed to introduce a new T-GNRFET in which with the use of dual material gate structure and work function engineering of the gate, off current (I OFF ) and DIBS (Drain Induced Barrier Shortening) are significantly reduced, meanwhile persevering ON state characteristics specially sub-threshold swing.…”