NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors

Miwa, T.; Yamada, Jun−ichi; Koike, Hideaki; Toyoshima, Hisashi; Amanuma, Kazushi; Kobayashi, S.; Tatsumi, Toru; Maejima, Y.; Hada, H.; Kunio, Takeshi

doi:10.1109/4.910492

Cited by 59 publications

(25 citation statements)

References 6 publications

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“…Previous work adopted various types of emerging memory devices, such as FeRAM, STT-MRAM (MTJ), PCRAM, and RRAM (memristor) in nvSRAM cells [9,10,7,11,12,13,14,15]. The 4T2R and 7T2R nvSRAMs [9,11,12,14] achieve small cell area at the expense of significant DC-short current at storage nodes (Q and QB).…”

Section: Nonvolatile Srammentioning

confidence: 99%

See 1 more Smart Citation

Ambient energy harvesting nonvolatile processors

Liu

et al. 2015

Proceedings of the 52nd Annual Design Automation Conference

127

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Energy harvesting is gaining more and more attentions due to its characteristics of ultra-long operation time without maintenance. However, frequent unpredictable power failures from energy harvesters bring performance and reliability challenges to traditional processors. Nonvolatile processors are promising to solve such a problem due to their advantage of zero leakage and efficient backup and restore operations. To optimize the nonvolatile processor design, this paper proposes new metrics of nonvolatile processors to consider energy harvesting factors for the first time. Furthermore, we explore the nonvolatile processor design from circuit to system level. A prototype of energy harvesting nonvolatile processor is set up and experimental results show that the proposed performance metric meets the measured results by less than 6.27% average errors. Finally, the energy consumption of nonvolatile processor is analyzed under different benchmarks.

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Section: Nonvolatile Srammentioning

confidence: 99%

“…The 4T2R and 7T2R nvSRAMs [9,11,12,14] achieve small cell area at the expense of significant DC-short current at storage nodes (Q and QB). To cut off this DC-short current at storage nodes, extra transistors are required at the expense of larger cell area for nvSRAMs [7,13,15].…”

Section: Nonvolatile Srammentioning

confidence: 99%

Ambient energy harvesting nonvolatile processors

Liu

et al. 2015

Proceedings of the 52nd Annual Design Automation Conference

127

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“…The materials used in this technology are of in broad range applications. They range from health care to video surveillance and other power gating techniques [13].…”

Section: Resistive Technologymentioning

confidence: 99%

Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation

Mounica¹,

Ganesh²

2016

IJECE

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Now-a-days, Energy consumption is the major key factor in Memories. By switching the circuit in off mode and with an lower voltages, leads to decrease in an power dissipation of the circuit. Compared to DRAM SRAM'S are mostly used because of their data retaining capability. The major advantage of using SRAM's rather than DRAM'S is that, they are providing fast power-on/off speeds. Hence SRAM's are more preferred over DRAM's for better instant-on operation. Generally SRAM's are classified in to two types namely volatile and non-volatile SRAM's. A non-volatile SRAM enables chip to achieve performance factors and also provides an restore operation which will be enabled by an restore signal to restore the data and also power-up operation is performed. This paper describes about novel NVSRAM circuit which produces better "instant-on operation" compared to previous techniques used in SRAM's. In addition to normal 6T SRAM core, we are using RRAM circuitry (Resistive RAM) to provide better instant-on operation. By comparing the performance factors with 8T2R and 9T2R, 8T1R design performs the best in the Nano meter scale. Thus this paper provides better performances in power, energy, propagation delay and area factors as compared with other designs. Keyword:Energy . Generally SRAM's are preferred than DRAM's because of it's data retaining capability. SRAM performs both volatile and non-volatile operations. In our project we concentrate more on non-volatile SRAM which produces instant on operation [3] . These are designed in two technologies namely transistor technology and resistive technology. In accordingly, resistive technology uses 1R and 2R series. Compared to 2R series 1R produces more non-volatile operation effectively. Hence in this project we are using resistive technology which was often called as Resistive RAM (RRAM). For controlling or flowing of current/voltage through the resistor, we are using one additional transistor which was so called as control transistor. As we know that the transistor will act as a resistor in linear region. The RRAM circuitry which we are using in this paper was act as a "Mermistor" (memory resistor) [4].As the years progressed, expanded thickness 64kb & quicker get to have been accounted for NVSVRAM'S for military applications. The programming technology of an FPGA's are generally utilizes SRAM technology [1]. The energy consumption [5] has become a major source due to an considerably increase in an leakage current while we are reducing it's supply voltage and feature size of an SRAM. Instant

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“…There are many categories of nvSRAM design have been published [3][4][5][6][7][8][9][10]. In this paper, we also compare the small area nvSRAM cells, which include 6T2R [8], 8T2R [9][10] and the proposed 7T2R.…”

Section: Introductionmentioning

confidence: 96%

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application

Sheu¹,

Kuo²,

Chang

et al. 2013

2013 IEEE Asian Solid-State Circuits Conference (A-Sscc)

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This study demonstrates a new 7T2R nonvolatile SRAM (nvSRAM) with 3D ReRAM stacked structure for normally-off computing application. With this structure, the fully performance of SRAM can work well in active mode, and reduce the leakage current in power-off mode. High performance HfOx based ReRAM is used for high speed storage element and exhibits an instant-on characteristic. The present 7T2R nvSRAM cell includes a 1T2R RRAM (1 transistor/2 resistive memory) cell and a 6T SRAM circuit, which is low area penalty and achieve the nvSRAM function. The write margin is improved over 1.03x and 1.37x larger than that of 6T SRAM and 6T2R nvSRAM. The access time and read/write power consumption in 7T2R nvSRAM is better than that of 8T2R structure. Finally, a 16 Kb macro was fabricated with a 0.18 μm TSMC FEOL and ITRI BEOL. According to the measurement result, the VDD min can be low down to 0.7 V and access time can be fast as 8.3 ns without pad delay. The data storage time is only 10 ns for SET and RESET in the ReRAM cell.

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NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors

Cited by 59 publications

References 6 publications

Ambient energy harvesting nonvolatile processors

Ambient energy harvesting nonvolatile processors

Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation

A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application

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