2022
DOI: 10.1109/access.2022.3157402
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Nwise and Pwise: 10T Radiation Hardened SRAM Cells for Space Applications With High Reliability Requirements

Abstract: SRAM cells are widely used to design memory blocks of, e.g., caches, register files, and translation lookaside buffers. Depending on the SRAM application, the design requirements are different. For instance, in space applications, alongside energy efficiency, reliability is a main issue since the system is launched into space with a limited energy budget and stay exposed to high doses of radiation strikes for a long time. The Nwise cell has recently been proposed by the authors of this paper as the first highl… Show more

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Cited by 12 publications
(13 citation statements)
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“…It is important that the reference methods are base models and are widely used in recent works, e.g. [24]- [26]. For our simulations, we have chosen the size of transistors in a way that the minimum PDP is achieved for the circuit.…”
Section: Evaluation and Experimental Resultsmentioning
confidence: 99%
“…It is important that the reference methods are base models and are widely used in recent works, e.g. [24]- [26]. For our simulations, we have chosen the size of transistors in a way that the minimum PDP is achieved for the circuit.…”
Section: Evaluation and Experimental Resultsmentioning
confidence: 99%
“…The Nwise and Pwise cells have been recently proposed as area-efficient and highly reliable radiation-hardened SRAM cells [11,13]. However, we will go with Nwise cell in this chapter since it is a proper choice for cache designs.…”
Section: Memory Design Details 21 Cell Schematicsmentioning
confidence: 99%
“…The rest of the chapter is organized as follows: In Section 2, we first briefly review the Nwise cell design details [11,13]. Then, we move on to the adapted version of the Nwise cell, which can operate reliably during voltage scaling.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, redundant node reinforcement is often used to harden the design of the cells [ 7 ], and the radiation resistance of the cells is improved through redundant feedback mechanisms [ 8 , 9 ]. Over the years, various soft-error-recovery SRAM cells have been proposed [ 6 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. The authors of [ 10 ] presented two SRAM-hardened cells, NS10T, and PS10T.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, neither of these cells can recover from a “0”→“1” SEU if sufficient charge is accumulated at the “0”-storing storage node. In addition, some hardened structures have certain soft error recovery effects, such as Nwise-10T [ 13 ], SARP-12T [ 14 ], QCCS-12T [ 15 ], RHMC-12T [ 16 ], RH-14T [ 17 ], RHS-14T [ 18 ], etc. Although the hardened cells have achieved certain radiation tolerance, most structures also suffer from sacrificing area, increasing power consumption, circuit complexity, and reduced stability, failing to achieve a good balance in terms of area, power consumption, read and write time, and radiation tolerance ability.…”
Section: Introductionmentioning
confidence: 99%