Observation of n- and p-Type Conduction of Site-selectively Zn-doped Epitaxial Layers of CuGaS₂

Abstract

Site-selective Zn doping for vapor phase eptaxial CuGaS2 layers on GaP substrates was tried by adding Zn vapor to each metal source supply period under completely separated alternate source feeding condition with the sources of CuCl, dietylegalliumchloride, and H2S. For the case of simultaneous Ga and Zn supply, the grown layers were found to be of n-type, while for the case of simultaneous Cu and Zn supply the layers were of p-type. The formation of a p-n homo-junction was demonstrated using these p- and n-type layers, and electroluminescence from this p-n junction was observed under pulsed forward voltage application at 77 K. This is believed to be the first successful report of conduction type control of CuGaS2 by impurity doping.

First-principles analysis of the intermediate band inCuGa1−xFexS2

“…Therefore, it would be desirable, if we can somehow partially fill the IB, for example by n-type doping. Both n-and p-type doping of CuGaS 2 have been achieved upon incorporation of Zn impurities 35 , depending on the sample preparation process.…”

Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

“…Ooe et al found experimental evidence for the first time that Zn is really an amphoteric impurity [3,4] based on detailed studies of photoluminescence (PL) involving timeresolved (TR) spectra during decay in (CuGaS 2 ) 1Kx -(2ZnS) x (xZ0.00025K0.05) bulk crystals. Recently conductivity control has been achieved for Zn doped CuGaS 2 layers on GaP substrates grown by vapor phase epitaxy based on atomic layer growth technique (AL-VPE) [5][6][7]. This paper reports Raman scattering spectra observed for non-site-selectively and site-selectively Zn doped CuGaS 2 layers.…”