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Site-selective Zn doping for vapor phase eptaxial CuGaS2 layers on GaP substrates was tried by adding Zn vapor to each metal source supply period under completely separated alternate source feeding condition with the sources of CuCl, dietylegalliumchloride, and H2S. For the case of simultaneous Ga and Zn supply, the grown layers were found to be of n-type, while for the case of simultaneous Cu and Zn supply the layers were of p-type. The formation of a p-n homo-junction was demonstrated using these p- and n-type layers, and electroluminescence from this p-n junction was observed under pulsed forward voltage application at 77 K. This is believed to be the first successful report of conduction type control of CuGaS2 by impurity doping.

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