2022
DOI: 10.1038/s41598-022-24713-5
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Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content

Abstract: Hydrogenated amorphous silicon (a-Si: H) has received great attention for rich fundamental physics and potentially inexpensive solar cells. Here, we observe new resonant excitons and correlated plasmons tunable via hydrogen content in a-Si: H films on Indium Tin Oxide (ITO) substrate. Spectroscopic ellipsometry supported with High Resolution-Transmission Electron Microscopy (HR-TEM) is used to probe optical properties and the density of electronic states in the various crystallinity from nano-size crystals to … Show more

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Cited by 10 publications
(7 citation statements)
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“…Jelas dari gambar bahwa peningkatan suhu sel menyebabkan penurunan tegangan dan peningkatan arus [26]. Selain itu, peningkatan radiasi matahari meningkatkan volt dan arus karena peningkatan radiasi matahari yang dating [27]. Hal ini juga menunjukkan bahwa volt keluaran sel surya meningkat dengan menurunnya arus keluaran sel surya.…”
Section: Hasil Dan Pembahasanunclassified
“…Jelas dari gambar bahwa peningkatan suhu sel menyebabkan penurunan tegangan dan peningkatan arus [26]. Selain itu, peningkatan radiasi matahari meningkatkan volt dan arus karena peningkatan radiasi matahari yang dating [27]. Hal ini juga menunjukkan bahwa volt keluaran sel surya meningkat dengan menurunnya arus keluaran sel surya.…”
Section: Hasil Dan Pembahasanunclassified
“…But when given light with a shorter wavelength (higher frequency [6], towards the purple color of the light spectrum) than before [7], suddenly electrons escape from the metal plate so that an electric current is detected [8], even though the intensity given is smaller than the previous intensity [9]. This means that the energy required by the metal plate to remove electrons depends on the wavelength [10].…”
Section: Introductionmentioning
confidence: 99%
“…Under the right conditions, silicon and carbon-based radicals can combine to form three-dimensional SiC [13]. They used inductively coupled PECVD to develop SiC thin films produced by a mixture of hydrogen-diluted SiH 4 and CH 4 gas at 200 °C for the substrate [14]. This demonstrates the critical role reactive hydrogen atoms play in encouraging the growth of SiC by lowering the free energy of crystallographic facets and lowering the carbon content by removing surface carbon atoms [15].…”
Section: ■ Introductionmentioning
confidence: 99%