Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy

Almassy, Robert J.; Reynolds, D. C.; Litton, C. W.; Bajaj, K. K.; McCoy, G. L.

doi:10.1016/0038-1098(81)90016-8

Cited by 34 publications

(4 citation statements)

References 6 publications

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“…For doping densities n d < n c1 , transport is dominated by hopping. The probability P ij of an electron hopping from an impurity i to j decreases exponentially with the inter-donor distance R ij due to the reduced overlap of their wave functions with the effective Bohr radius a d = a Bohr E Ryd /( r E d ) where r = 12.35 is the background relative dielectric constant 20 and E d = 5.8 meV the donor binding energy in GaAs 21 . The energy mismatch between the two sites (…”

Section: Electron Dynamicsmentioning

confidence: 99%

Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition

et al. 2017

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We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hopping induced loss of spin coherence and hyperfine interaction yields a maximum spin lifetime exceeding 800 ns. At slightly higher doping concentrations, however, the spin relaxation deviates from the expected Dyakonov-Perel mechanism which is consistently explained by a reduction of the effective motional narrowing with increasing doping concentration. The reduction is attributed to the change of the dominant momentum scattering mechanism in the metallic impurity band where scattering by local conductivity domain boundaries due to the intrinsic random distribution of donors becomes significant. Here, we fully identify and model all intricate contributions of the relevant microscopic scattering mechanisms which allows the complete quantitative modeling of the electron spin relaxation in the entire regime from weakly interacting up to fully delocalized electrons.

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Section: Electron Dynamicsmentioning

confidence: 99%

Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition

et al. 2017

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“…The ionization energies estimated here for the GaAs:Te and GaAs:Se samples are both close to the predicted value of the ionization energy from the hydrogen approximation of the donor in GaAs (E D ¼ 5:77 meV) or S and Si donor ionization energies in GaAs evaluated by photoluminescense measurements. 29,30) There is very little literature on the characteristics of a Se donor in a GaAs layer to be compared with our results. However, the characteristics of the obtained spectral response are consistent with the result of Summers et al in the sense that GaAs:Se is more sensitive than GaAs:Te in the region of shorter wavelengths, although our doping method and doping concentration are different from those used in the investigation by Summers et al 31) Further investigation is necessary on the behavior of the Se donor.…”

Section: Spectral Responsementioning

confidence: 80%

“…165 and No. 168.donor in GaAs (E D ¼ 5:77 meV) or S and Si donor ionization energies in GaAs evaluated by photoluminescense measurements 29,30). There is very little literature on the characteristics of a Se donor in a GaAs layer to be compared with our results.…”

mentioning

confidence: 86%

GaAs:Se and GaAs:Te Photoconductive Detectors in 300 µm Region for Astronomical Observations

Watanabe

Ueno

Wakaki

et al. 2008

jjap

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The wavelength region ¼ 200 { 300 mm is a little-known spectral window in observational astronomy. Recently, satelliteborne observatories, which are unaffected by atmospheric absorption and emission, have become available for astronomical research; however, the detector technology for this wavelength region is still undeveloped. N-type gallium arsenide is a good candidate for use in a high-sensitivity extrinsic photoconductor in this wavelength region. However, extrinsic photoconductors require very pure GaAs single crystals to achieve high performance. Liquid phase epitaxy is a suitable crystal growth method for realizing such pure GaAs crystals for use in fabricating the photoconductor because of the sufficient purity of the grown GaAs crystals and the considerable thickness were made possible by this method. We have GaAs doped with selenium and tellurium for fabricating the extrinsic photoconductors by the liquid phase epitaxy. By controlling the doping quantity, lightly doped GaAs:Te and GaAs:Se were successfully obtained (net donor concentrations of N D % 10 14 cm À3 ). The fabricated GaAs extrinsic photoconductors exhibited different spectral responses because of their different doping materials. The spectroscopic measurements of the GaAs photoconductors showed that they are sensitive over a wide wavelength range of 170 -320 mm. The GaAs:Te and GaAs:Se that we developed have almost the same or higher sensitivities than GaAs photoconductors developed in the past or semiconductor-based bolometers operating at T ¼ 1:6 K. Moreover, they are sensitive in a wider wavelength region than Ge:Ga photoconductors.

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“…In other semiconductor materials, such as Si and Ge, the electron is more strongly bound to the impurity center due to its larger effective mass. In this case, the electron probability density is on average [3], c) [31].…”

Section: A2 the Central Cell Correctionmentioning

confidence: 99%

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

Cardozo

2004

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Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy

Cited by 34 publications

References 6 publications

Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition

Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition

GaAs:Se and GaAs:Te Photoconductive Detectors in 300 µm Region for Astronomical Observations

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

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