Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy

Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

“…The blue-shift is mostly attributable to improved substitutional disorder in the epilayer on the stepped 10 -[1 1 1]A. Similar observations have been made before for GaInP grown by MOCVD, SS-MBE, and gas-source MBE[3,11,15]. We note in passing that FWHMs inFig.…”

“…From the equation for E g ðZÞ; Z is between 0.29 and 0.33 for the 10 -[1 1 1]A and 0.34-0.35 for the (1 0 0)-0 . For comparison, the average Z is slightly higher than 0.195oZo0.295, which have been measured earlier for GaInP grown by SS-MBE [11]. This higher value of Z can be explained by higher growth temperature (523 C compared to 420-500 C).…”

“…Therefore, little is known about the effects of substrate orientation on the optical properties of MBE-grown wide-gap phosphides [10,11].…”

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

“…11,12 Although commonly observed at the higher temperatures associated with metalorganic chemical vapor deposition (MOCVD) growth, Cu-Pt ordering has also been observed in solid source MBE-grown material. 13 In order to investigate which phenomenon is dominant in this case, variable temperature polarized photoluminescence studies were performed. For these studies, an R6G tunable dye laser was used to excite photoluminescence, and a half-wave plate combined with a polarization analyzer was used to detect luminescence polarized along each crystallographic axis, [À1 1 0] and [1 1 0].…”

Metamorphic growth of tensile strained GaInP on GaAs substrate

“…For this purpose, we grew a series of thin (20, 60, 80, and 140 nm) Ga 0.66 In 0.34 P layers at low temperature directly on GaAs. GaInP composition is assumed to be unchanged for growth temperatures between 420 and 525 1C [14,15]. We used the same Ga and In fluxes as for the top 200 nm GaInP layer incorporated in the structures with graded buffers.…”