Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Jong, Maurits J. de; Salm, Cora; Schmitz, Jurriaan

doi:10.1016/j.microrel.2017.07.038

Cited by 12 publications

(7 citation statements)

References 14 publications

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“…Averaged over all devices of different gate lengths and passivation species, a recovery of approximately 23.2% for ∆N cp is achieved by annealing in argon. The experiments confirm the recently published findings that DAHC recovery shows no gate length dependency [6] and that recovery rates are similar for hydrogen-or deuteriumpassivated transistors [20]. In contrast to earlier work [17], no pronounced difference between the ∆N cp recovery as measured at 100 kHz or 3 MHz.…”

Section: A Argonsupporting

confidence: 89%

“…The results confirmed earlier results [6] that gate length has no strong influence on the recovery rate. Also, a similar recovery mechanism plays a role in the recovery of both hydrogen and deuterium passivated devices [20]. This is explained by the fact that even for deuterium passivated devices, hydrogen is present in the dielectric and may (mainly) contribute to the repassivation step.…”

Section: Effect Of Ambientmentioning

confidence: 92%

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Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices

Jong

Salm

Schmitz

2020

2020 IEEE International Reliability Physics Symposium (IRPS)

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nMOSFETs have been degraded by hot-carrier injection and recovered by annealing in various ambients. Hydrogen will depassivate from the interface due to the hot-carriers, creating dangling bonds, which will cause a shift in the various parameters like the threshold voltage, the subthreshold swing and the interface defect density. This paper investigates how the various ambients (argon, hydrogen, hydrogen plasma and atomic hydrogen) influence the recovery rate of these parameters. Results are discussed in the framework of Stesmans' model for hydrogen passivation at the interface. Furthermore, the influence of a silicon nitride scratch protection layer on the recovery is investigated. These results can be used to enhance the recovery rate and achieve more recovery at a lower anneal temperature, which is important for delaying the accumulative effect of hotcarrier degradation and, as such, extending the device lifetime.

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Section: A Argonsupporting

confidence: 89%

Section: Effect Of Ambientmentioning

confidence: 92%

Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices

Jong

Salm

Schmitz

2020

2020 IEEE International Reliability Physics Symposium (IRPS)

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“…A more profound S-curve was observed for a smaller gate length. The S-curve was observed during an earlier experiment [13].…”

Section: Cooling Rate Dependencementioning

confidence: 82%

Towards understanding recovery of hot-carrier induced degradation

Jong

Salm

Schmitz

2018

Microelectronics Reliability

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A B S T R A C TThis article treats the recovery of hot-carrier degraded nMOSFETs by annealing in a nitrogen ambient. The recovery rate is investigated as a function of the annealing temperature, where the recovery for increasing temperatures is in agreement with the passivation processes. At the original post-metal anneal temperature of T = 400°C, the device's original performance is fully restored. Higher temperatures induce a permanent, unrecoverable change to the devices, manifested in a gradual V T shift. The recovery rate is found to be independent of both the transistor gate length and the cooling rate (quench, slow and stepped cooling) upon annealing. These findings are used to gain further understanding of the mechanisms behind the recovery of hot-carrier damage. The recovery rate exhibits Arrhenius behavior and the recovery data are consistent with Stesmans' recovery model.

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“…On the other hand, the longer t ANNL was applied, the better curing effects to restore V TH and SS were observed [13], [19]. It should be noted that this work utilized the punchthrough current for Joule heating.…”

Section: Methodsmentioning

confidence: 86%

A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET

Park

Lee

Choi

2019

IEEE J. Electron Devices Soc.

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Recently, localized thermal annealing has been spotlighted as an effective method to cure aged devices. The degraded gate oxide can be successfully cured by local annealing, which utilizes Joule heat inherently generated in the device. But, despite this advantage, there has been no study comparing the curing effects with various other annealing methods. In this study, the curing effects of local annealing and a conventional global annealing method applied to SOI FinFETs are compared. The measured electrical characteristics are discussed to evaluate the damage curing with respect to curing level and variability.INDEX TERMS Damage curing, degradation, electrothermal annealing (ETA), FinFET, forming gas annealing (FGA), global annealing, hot-carrier injection (HCI), Joule heat, local annealing, reliability, SOI FinFET.

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Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Cited by 12 publications

References 14 publications

Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices

Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices

Towards understanding recovery of hot-carrier induced degradation

A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET

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