Observer based PWM dead time optimization in automotive DC/DC-converters with synchronous rectifiers

Reiter, Tomas; Polenov, Dieter; Pröbstle, H.; Herzog, Hans Georg

doi:10.1109/pesc.2008.4592489

Cited by 5 publications

(2 citation statements)

References 5 publications

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“…Moreover, the reversely conducted MOSFET operates like synchronous rectification. With fine controlled dead time, the conduction time of the intrinsic diode can be minimised, thus the minority carrier accumulation in the drift region can be reduced dramatically [9][10][11]. However, considering device tolerance, unexpected circuit delay and potential shoot-through risk, enough dead time is still required in power converters for reliable operation, and the reverse recovery current will be caused.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Wang

Zhang

et al. 2016

IET Power Electronics

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To use the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) intrinsic diode as a freewheeling diode in a power converter, its reverse recovery characteristics should be carefully evaluated from the point view of application. The intrinsic diode is based on the p-in junction structure, thus the minority carrier will inject into the drift layer during the forward conduction period, which leads to reverse recovery current when it switches off. The turn-off voltage, forward current, current commutating slope (di/dt) and junction temperature are major factors affecting the turnoff process of a diode, and are mostly concerned in practical applications. Therefore, in this study, the reverse recovery characteristics of the intrinsic diode are systematically evaluated based on these four factors. The experimental results are presented and discussed. The reverse recovery characteristics of an SiC Schottky barrier diode (SBD) and two types of silicon (Si) p-in diode are also presented for a quantitative comparison. In terms of the reverse recovery performance, although not as good as the SiC SBD, the SiC MOSFET intrinsic diode is much better than the Si p-in diode.

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Section: Introductionmentioning

confidence: 99%

Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Wang

Zhang

et al. 2016

IET Power Electronics

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“…This requires care to avoid shoot-through where both MOSFETs conduct, and a precise coordination of the activation of the high and low-side drivers would be needed. Predictive and adaptive gate driving has been reported for automotive applications at voltages in the 30V-40V range using 55-V [14] and 75-V [15] devices, where an optimal gate signal overlap is found which minimizes the sum of reverse recovery loss and shoot-through loss. In this manner the point of maximum conversion efficiency can be found.…”

Section: Introductionmentioning

confidence: 99%

Achieving Efficiencies Exceeding 99% in a Super-Junction 5-kW DC–DC Converter Power Stage Through the Use of an Energy Recovery Snubber and Dead-Time Optimization

Hopkins

Proynov

McNeill

et al. 2018

IEEE Trans. Power Electron.

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A highly efficient 5-kW bidirectional DC-DC converter power stage operating from a 400-V supply implementing Super-Junction (SJ) MOSFETs is presented. SJ MOSFETs have low on-state resistances and low switching losses. However, their application in voltage-source converters can be compromised by the reverse recovery behavior of their intrinsic diodes and their highly non-linear output capacitances. A series switching-aid circuit is used to control the output capacitance charging current. The dead times between switching transitions are assessed and optimized in order to deactivate the intrinsic diodes. The combination of these techniques enables very high efficiencies to be attained. Calorimetric measurements indicate a full-load efficiency of 99.1% for the prototype 5-kW DC-DC converter power stage. A loss reduction of approximately 50% is achieved with the prototype converter power stage when compared to an equivalent IGBT based power stage. Lastly, a loss vs. duty cycle function is experimentally determined which can be used to inform the design of a maximum efficiency point tracking system.

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A quasi-resonant bi-directional tri-mode DC-DC converter with limited valley current

Moshirvaziri

Trescases

2012

2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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Observer based PWM dead time optimization in automotive DC/DC-converters with synchronous rectifiers

Cited by 5 publications

References 5 publications

Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Achieving Efficiencies Exceeding 99% in a Super-Junction 5-kW DC–DC Converter Power Stage Through the Use of an Energy Recovery Snubber and Dead-Time Optimization

A quasi-resonant bi-directional tri-mode DC-DC converter with limited valley current

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