1993
DOI: 10.1051/jp3:1993114
|View full text |Cite
|
Sign up to set email alerts
|

Obtention de couches minces texturées de MoSe2 à partir de feuillets de Mo et de Te

Abstract: Regu le J8 juin J992, rdvisd le 8 septembre J992, acceptd le 8 octobre J992) R4sumd. Une m£thode d'obtention de couches minces textur£es de MoSe2 a >t> mise au point. Ces couches sent obtenues h partir de feuillets de MO et de Te successivement superpos£s, puis trait£es therrniquement en pr£sence de vapeur de Te et/ou Se. Les couches obtenues sent £tudi£es par spectroscopie de photo£lectrons (XPS), diffraction de rayons

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
7
0

Year Published

1993
1993
2006
2006

Publication Types

Select...
5

Relationship

1
4

Authors

Journals

citations
Cited by 6 publications
(8 citation statements)
references
References 9 publications
1
7
0
Order By: Relevance
“…Table 1, the average barrier height in MoSe, layers from sputtered film is higher than that of MoSe, synthesized layers. It means that there is a bigger disorder at the grain boundaries which is in agreement with the results of the structural properties [5,6]. Below 300 K, the low activation energies in the low temperature range ( T < 200 K) may be due to hopping conduction [15 to 171.…”
Section: Resultssupporting
confidence: 81%
See 2 more Smart Citations
“…Table 1, the average barrier height in MoSe, layers from sputtered film is higher than that of MoSe, synthesized layers. It means that there is a bigger disorder at the grain boundaries which is in agreement with the results of the structural properties [5,6]. Below 300 K, the low activation energies in the low temperature range ( T < 200 K) may be due to hopping conduction [15 to 171.…”
Section: Resultssupporting
confidence: 81%
“…Manai et al [5] have synthesized textured MoSe, thin films by dc diode sputtering and post-annealing under selenium and tellurium pressure. Ouadah et al [6] have synthesized textured MoSe, thin films by annealing Mo and Te constituents, in thin film form, under selenium and tellurium pressure. This second method improves considerably the structural properties of the MoSe, films.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The layered transition metal dichalcogenides MX 2 (M = Mo, W, Ta, Nb, V, Ti, Zr, Hf; X = Se, S) have been extensively investigated. Some investigations were mainly related to the lubricating properties of MS 2 [1][2][3][4], and others to the photovoltaic properties of MX 2 [5][6][7][8][9]. However, the resource abundance and the nontoxicity of sulfur have to be taken into account for applications.…”
Section: Introductionmentioning
confidence: 99%
“…The presence of the two peaks at 54.1 eV and 55.0 eV is due to Se 3d of the molybdenum diselenide. [18] The oxygen content within the samples decreased markedly (to less than 5 %) with longer sputtering times, and this, together with the fact that the smoother, less porous films showed less oxygen content, indicates that the oxidation seen in some films is due to transport of the samples and is not inherent in the CVD process. The amount of chlorine found in the films varied between 0 and 10 at.-% as determined by EDAX and XPS measurements.…”
Section: Resultsmentioning
confidence: 94%