Octave Bandwidth Doherty Power Amplifier Using Multiple Resonance Circuit for the Peaking Amplifier

Kang, Hyunuk; Lee, Hwiseob; Lee, Wooseok; Oh, Hansik; Lim, Wonseob; Koo, Hyungmo; Park, Cheon-Seok; Hwang, Keum Cheol; Yang, Youngoo

doi:10.1109/tcsi.2018.2869905

Cited by 76 publications

(32 citation statements)

References 24 publications

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“…The implemented GaN DPA provides drain efficiency of 47-54% at 6-dB back-off in 1.8-2.7 GHz (40%). A modified version of this architecture was proposed in [40], where a multiple-resonance circuit is used for the peaking amplifier. The resonant network is designed to provide an optimum load resistance to the peaking transistor at the band center, while providing an optimum susceptance B opt (ω) at its output to broaden the bandwidth of the lumped-element impedance inverter at the carrier amplifier.…”

Section: Post-matching Dpamentioning

confidence: 99%

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

2020

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Section: Post-matching Dpamentioning

confidence: 99%

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

2020

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“…The δ dB power bandwidth can be defined by determining the frequency range in which the back-off impedance stays within the δ dB power contour on the Smith chart. Therefore, to obtain the δ dB power bandwidth for the proposed DPA, the real part of the back-off impedance and admittance are required to satisfy the following two equations [21], [22]:…”

Section: B Bandwidth Analysismentioning

confidence: 99%

“…where f refers to the operation frequency, which is normalized to the center frequency f c , θ 1 and θ 2 is the reference phase at f c and α and β is the changing factor of the phase change with the operation frequency of OMN 1 and OMN 2, respectively. From (14), (16), (20) and (21), we can see that Z M 1,bo and Z M 2,bo can be expressed by using α, β, θ 1 , θ 2 and f . If these parameters are substituted into (18) and (19), the resistances of Z M 1,bo and Z M 2,bo are now restricted to the condition (18) and the conductances of Y M 1,bo and Y M 2,bo are restricted to the condition (19).…”

Section: B Bandwidth Analysismentioning

confidence: 99%

See 1 more Smart Citation

Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Pang

et al. 2019

IEEE Trans. Microwave Theory Techn.

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A novel architecture to extend the bandwidth of the Doherty power amplifier (DPA) is presented in this paper. It is illustrated that two DPA modes at different frequency bands can be realized by simply swapping the gate biases of the transistors without changing the matching circuits, and hence ultra wide bandwidth can be achieved by using a single load modulation network in DPA. A dual-mode DPA with 2.8-4.1 GHz bandwidth for Mode I and 2.2-2.7/4.2-4.8 GHz bandwidth for Mode II using commercial GaN transistors is designed and implemented to validate the proposed architecture. The fabricated DPA attains a measured 7.5-11.7 dB gain and 39.2-41 dBm saturated power. 35.0% to 49.7% drain efficiency is obtained at 6 dB output power back-off for the designed dual-mode bands. When driven by a 10-carrier 200 MHz OFDM signal with 7.7 dB peak to average power ratio, the proposed DPA achieves adjacent channel leakage ratio of better than-50 dBc after digital predistortion at 2.5/3.5/4.5 GHz with average efficiency of 46.0/35.7/33.0%. This simple configuration provides a promising solution for 5G, where multiple frequency bands in sub-6 GHz will be deployed.

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“…Recently, as a result of high-power density, high breakdown voltage, and high-frequency characteristics, the gallium nitride high electron mobility transistor (GaN-HEMT) has been widely utilized for RF power amplifiers for various applications including base stations for wireless communication systems, satellite communication systems, and radars. In addition to the hybrid RF power amplifiers, monolithic microwave integrated circuits (MMICs) using GaN-HEMT have also been developed [1][2][3][4][5]. An accurate large-signal transistor model is essential in designing circuits with high performances and also in reducing the design time.…”

Section: Introductionmentioning

confidence: 99%

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Lee

Kang

Choi³

et al. 2020

Electronics

Self Cite

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This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

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Octave Bandwidth Doherty Power Amplifier Using Multiple Resonance Circuit for the Peaking Amplifier

Cited by 76 publications

References 24 publications

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

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