Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs

Chou, Y.C.; Li, G.P.; Chen, Y.C.; Wu, C.S.; Yu, K.K.; Midford, T.A.

doi:10.1109/55.537081

Cited by 28 publications

(11 citation statements)

References 7 publications

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“…These current densities are in perfect agreement with the values that can be calculated using the material properties listed in Table I and with the results for the small periphery devices. The off-state breakdown voltage (V BD,off ), which is defined as the drain-source voltage at which the gate leakage current reaches 1.0 mA/mm [8][9] for a completely pinched-off device, has been determined for a 1.0 mm T-gate HEMT with 10 gate fingers in a comb layout. Figure 4 shows that the device broke down at a drain-source voltage of 155 V, before the gate leakage current reached the 1.0 mA/mm level.…”

Section: Large-periphery Devicesmentioning

confidence: 99%

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

et al. 2008

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We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (W g ) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH 4 OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 -4 GHz) under class AB bias conditions (V DS = 40 -60 V, and V GS = -4.65 --4.0 V).

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Section: Large-periphery Devicesmentioning

confidence: 99%

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

et al. 2008

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“…͓DOI: 10.1063/1.1394720͔ High-breakdown voltage is an important factor for heterostructure field-effect transistors ͑HFETs͒ in high-power applications. 1 Practically, semiconductor devices operated in high-temperature environment with good performances are needed for automotive, aircraft, space technology, and other applications. 2 Therefore, HFETs with remarkable highbreakdown and high-temperature characteristics have been fabricated and reported over the past years.…”

mentioning

confidence: 99%

Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Liu

et al. 2001

Applied Physics Letters

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Articles you may be interested inDelta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages Appl. Phys. Lett. 81, 4649 (2002); 10.1063/1.1527984 Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Phys. Lett. 80, 3207 (2002); 10.1063/1.1473701 AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates Interactions between DX centers and hot electrons and holes in Al 0.25 Ga 0.75 As/GaAs heterostructure fieldeffect transistors

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“…More detailed investigation to identify this trap defect is currently underway. The gate-drain breakdown walkout due to hot carrier stress is in analogy to the off-state breakdown walkout due to avalanche hot carrier stress [5]. Since the high electric field is also located at the gate edge on the drain side, the hot carrier injection into the nitride layer can modify the interface properties of nitride/ semiconductor layers and/or be trapped there.…”

Section: E+omentioning

confidence: 99%

“…The authors attributed the changes to the increased surface depletion by hot-electron-induced-traps between the gate and drain, and traps generation in the AlGaAs layer under the gate. Furthermore, Chou et al [5] investigated three-terminal drainsource breakdown walkout on nitride passivated high-power PHEMT's and attributed the breakdown walkout to the surface leakage current reduction. However, a comprehensive characterization of hot carrier induced device degradation in power AlGaAdInGaAs PHEMT's is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Hot carrier reliability in high-power PHEMTs

Chou

et al.

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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PECVD nitride passivated high-power PHEMT's were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.

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Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs

Cited by 28 publications

References 7 publications

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Hot carrier reliability in high-power PHEMTs

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