OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers

InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers

“…Longer wavelength undulations are observed for the polar miscuts, producing rougher surfaces. The magnitude of the roughnesses obtained compare favorably to other published results [8,9]. Vendor B had the lowest RMS roughness, but the roughness measured for substrates from vendor A, miscut toward (1 1 0), or from vendor C is statistically comparable to this result.…”

“…Few studies provide insight on the impact of initial substrate surface condition on the morphology of latticematched ternary alloys [8]. Published studies concentrate on thin layers, typically 2 mm or less, and focus on establishing step-flow growth for abrupt interfaces to achieve quantum well heterostructures [9,10]. These studies show step pinning and pit formation as the V/III ratio was raised for AlInAs.…”

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

“…QCLs have the large number of applications in high−resolution molecular spectroscopy, industrial control, medical diagnostics, military and law enforcement and free− −space telecommunications. Since the first demonstration in 1994 [1], they have undergone many improvements to achieve higher continuous−wave powers, better temperature stability and lower threshold currents [2,3].…”

“…Rev., 24, no. 2,2016 2016 SEP, Warsaw The electron concentration increases linearly with the IV/III ratio (the slope is 0.93) independent on the growth rates for 1.08 and 1.56 μm/h. In further studies disilane was used as a dopant source to exceed the doping level of 10 19 cm −3 suit− able for future applications in QCLs.…”

Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

“…The emission wavelength of QCLs covers the mid-and long-infrared region from l¼2.6 to l¼25 mm and part of the terahertz region of the spectrum [2,3], which opens up many immediate or potential applications in chemical and biological sensing, spectroscopy, astronomy and medical imaging. While tremendous progress has been made in improving the device performance via QCL structure design since its first demonstration in 1994 [4][5][6][7][8][9][10][11][12][13], there are few studies on the epitaxial growth itself [14][15][16][17], which, indeed, represents one of the most challenging tasks for semiconductor material growers. The QCL structure, with total thickness easily exceeding 10 mm and number of layers close to thousand, requires a precise control over the composition, thickness, background doping, and interface abruptness of each layer.…”