OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx

Jou, M. J.; Cherng, Ya-Tung; Jen, H. R.; Stringfellow, G. B.

doi:10.1016/0022-0248(88)90507-6

Cited by 47 publications

(22 citation statements)

References 18 publications

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“…The data is obtained from 9 SAED patterns and 6 FTs. Assuming that Vegard's law [35] is valid for the InP-InSb system, [36][37][38][39] and using the lattice constants of ZB-structured InP (5.87Å) and InSb (6.48Å), [40,41] the corresponding Sb concentrations (x) in the InP 1 À x Sb x alloy wires are 10 75 at%, 1676 at%, and 27722 at%, respectively [42]. (The larger uncertainties associated with the Sb content in the 4Q wires are not an experimental error but are due to compositional oscillations along the nanowire growth direction [43].)…”

Section: Introductionmentioning

confidence: 99%

Effect of precursor flux on compositional evolution in InP1−xSbx nanowires grown via self-catalyzed vapor–liquid–solid process

Ngo

Zhou

Mecklenburg

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Effect of precursor flux on compositional evolution in InP1−xSbx nanowires grown via self-catalyzed vapor–liquid–solid process

Ngo

Zhou

Mecklenburg

et al. 2011

Journal of Crystal Growth

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“…Unfortunately, no reports are available at this moment on the growth of GaNPSb alloys. In addition, it is worth noting that even GaPSb alloy is the material which was investigated by a few groups only [53][54][55][56][57] which suggests that this alloy can be very challenging for the growth. On the other hand, not much motivation for the growth of GaPSb alloy was presented so far and therefore this alloy was not explored with such intensity as other III-V alloys.…”

Section: Comparison and Discussionmentioning

confidence: 98%

Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate

Gładysiewicz

Kudrawiec

Wartak

2015

IEEE J. Quantum Electron.

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The 8-band kp Hamiltonian is applied to calculate electronic band structure and material gain in dilute nitride quantum wells (QWs) grown on InP substrate. Three N-containing QW materials (GaInNAs, GaNAsSb, and GaNPSb) and different N-free barriers (GaInAs, GaAsSb, GaPSb, AlGaInAs, GaInPAs, AlGaAsSb, GaPAsSb, and AlGaPSb) lattice matched to InP are analyzed. It is shown that Ga0.17In0.83NyAs1-y-QWs with Ga0.47In0.53As, Al0.23Ga0.24In0.53As, or Ga0.17In0.83P0.63As0.37 barriers are a very good gain medium for long-wavelength lasers grown on InP substrates. For N-free QWs the transverse electric (TE) mode of the material gain develops at at 2.1µm. This gain peak shifts towards longer wavelengths upon the incorporation of nitrogen and reaches the wavelength of ~2.8µm for 3% N. For GaNyAs0.26-ySb0.74-QWs no quantum confinement or very weak quantum confinement exist for electrons in Nfree QWs with the ternary barrier (i.e., GaAs0.51Sb0.49) and quaternary (Al0.23Ga0.77As0.51Sb0.49 and GaP0.25As0.15Sb0.60) barriers, respectively. However, the quantum confinement in the conduction band strongly increases after incorporation of nitrogen. For GaNyAs0.26-ySb0.74-QWs with 3% N gain peak for TE mode exists at 3.2 µm. Very similar changes in electronic band structure and material gain are noticed for GaNyP0.26-ySb0.74-QWs with GaP0.35Sb0.65, Al0.23Ga0.77As0.52Sb0.48, and GaP0.25As0.15Sb0.60 barriers. In that case gain peak (TE mode) for GaN0.03P0.23Sb0.74-QW with GaP0.35Sb0.65 barrier is at 3.6 µm. The intensity and the shape of material gain spectra in the three QW system vary with changes of the nitrogen concentration and the barrier content. At carrier concentration of 510 18 cm -3 the largest material gain exists for Ga0.17In0.83NyAs1-y-QWs with Al0.23Ga0.24In0.53As and Ga0.17In0.83As0.37Ga0.63 barriers.

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“…Both problems mentioned above can be avoided if an Al-free material such as InP 0.69 Sb 0.31 lattice matched to InAs is used as a barrier material [6]. The conduction band offset between InAs and InPSb is predicted to be ≈0.25 eV which is lower than the offset between InAs and AlSb but still suitable to form a quantum-well structure as shown below [7,8].…”

Section: Introductionmentioning

confidence: 95%

Magneto-transport of InAs-quantum wells using InP0.69Sb0.31as a barrier material

Schäpers

Engels

Lüth

et al. 1998

Superlattices and Microstructures

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OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx

Cited by 47 publications

References 18 publications

Effect of precursor flux on compositional evolution in InP1−xSbx nanowires grown via self-catalyzed vapor–liquid–solid process

Effect of precursor flux on compositional evolution in InP1−xSbx nanowires grown via self-catalyzed vapor–liquid–solid process

Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate

Magneto-transport of InAs-quantum wells using InP0.69Sb0.31as a barrier material

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