Electron diffraction measurements on (100) GaAs1−xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu-I type phase consists of alternating {100} oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E11 structure with alternating {210} oriented GaAs and GaSb layers.

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For the first time, {111} ordering (CuPt type) has been observed in InAs1−xSbx alloys in a wide compositional range from x=0.22 to 0.88. The order-induced spots show the highest intensity for x≊0.5 samples and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas the degree of order for these two variants is equal, and in other areas one variant dominates.

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The III/V semiconductor alloy GaP1−xSbx has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530–600 °C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is calculated to extend from x=0.01 to 0.99 at 530 °C, layers with excellent surface morphologies could be grown throughout the entire composition range. The 10 K energy band gap has been determined as a function of composition by using photoluminescence, x-ray diffraction, and electron microprobe analysis, yielding bowing parameters of 3.8 and 2.7 eV for the Γ and X conduction band minima, respectively.