On-chip decoupling zone for package-stress reduction

Spiering, V.L.; Bouwstra, S.; Spiering, R.M.E.J.; Elwenspoek, Michael Curt

doi:10.1016/0924-4247(93)80212-y

Cited by 54 publications

(34 citation statements)

References 6 publications

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“…The former scheme usually introduces a yielding mechanism around the whole sensing structure and separates it from the adhesion regions of sensor chip. In the pressure sensor developed by Spiering et al, the circular corrugated decoupling zone, with a high tangential stiffness but low radial stiffness, transformed the extra stress loads into local deformations with a small impact on the inner edge of the zone, reducing the influence from packaging by several orders of magnitude [114,115]. In the piezoresistive pressure sensor fabricated by microholes interetch and sealing process [39,116], the compact cantilever-shaped packaging-stress-suppressed suspension (PS 3 ) was on-chip integrated surrounding the pressure-sensing structure.…”

Section: Improvement In Thermal-performance Stabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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The field of piezoresistive sensors has been undergoing a significant revolution in terms of design methodology, material technology and micromachining process. However, the temperature dependence of sensor characteristics remains a hurdle to cross. This review focuses on the issues in thermal-performance instability of piezoresistive sensors. Based on the operation fundamental, inducements to the instability are investigated in detail and correspondingly available ameliorative methods are presented. Pros and cons of each improvement approach are also summarized. Though several schemes have been proposed and put into reality with favorable achievements, the schemes featuring simple implementation and excellent compatibility with existing techniques are still emergently demanded to construct a piezoresistive sensor with excellent comprehensive performance.

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Section: Improvement In Thermal-performance Stabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

View full text Add to dashboard Cite

show abstract

“…However, unlike the postal stamp, PDMS is soft because of its low Young's modulus. The Young's modulus of the PDMS is 750 KPa (Lotters et al 1997), which is 1 200;000 of that of silicon (Spiering et al 1993). Due to residual stress, the free-standing PDMS may have undesirable deformations, such as pairing, sagging, and shrinkage (Xia and Whitesides 1998;Xia et al 1999), that lead to failure of the patterns or misalignment problems and make the PDMS master not reliable to transfer patterns with sizes below 100 nm (Xia et al 1999;Chou et al 1996a;Delamarche et al 1997;Schmid and Michel 2000).…”

Section: Fabrication Of Conducting Polymer Nanopatterns Using the Eximentioning

confidence: 97%

Generation of micropatterns of conducting polymers and aluminum using an intermediate-layer lithography approach and some applications

Luo

2009

Microsyst Technol

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Conducting polymers, because of their promising potential to replace silicon and metals in building devices, have attracted great attention since the discovery of high conductivity in doped polyacetylene in 1977. Lithographic techniques present significant technical challenges when working with conducting polymers. Sensitivity of conducting polymers to environmental conditions (e.g., air, oxygen, moisture, high temperature, and chemical solutions) makes current photolithographic methods unsuitable for patterning the conducting polymers due to the involvement of wet and/or dry etching processes in those methods. Existing non-photolithographic approaches have limitations in throughput, resolution, or electrical insulation. Therefore, an intermediate-layer lithography (ILL) approach has been recently developed by my group to produce conducting polymer micro/nanostructures. In the ILL method, an intermediate layer of an electrically insulating polymer is coated between the substrate and a layer of the conducting polymer to be printed. Subsequently, the conducting polymer is printed through mold insertion using a hot-embossing process. The current hotembossing based methods face the obstacles of residual layer and depth of field (i.e., the height variation in the mold structures). In contrast, the ILL approach does not leave a residual layer in the material of interest, making conducting polymer patterns isolated from one another and avoiding the shorting problem in the electrical applications of these patterns. Furthermore, in the ILL, the height variation potentially existing among the mold structures has been transferred to the intermediate layer, ensuring that all patterns in the mold have been properly transferred to the conducting polymer layer. In addition to conducting polymers, the ILL can also be applied to pattern metals as well as other types of polymers. This paper gives a review of this ILL method and reports the results that we have achieved to date, including generation and applications of single and multiple layers of microstructures of conducting polymers and aluminum.

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“…For simplicity the silicon is approximated to be isotropic, and the value for the Young's modulus and Poisson's ratio used are the weighted averages for the (110)-plane E=168 GPa and ν=0.24 respectively. The error from this simplification should be small (16). The dashed lines in Figure 7 are the limits for our measurement setup using the KLA-Tencor P-15.…”

Section: Fracture Toughness Of Wafer-bonded Interfaces With High Spatmentioning

confidence: 99%

Low Temperature Plasma-Assisted-Wafer-Bonding for MEMS

et al. 2006

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Bonding is one of the most important tools for the fabrication of Silicon On Insulator (SOI) material and building of MicroElectroMechanical Systems (MEMS). Nevertheless, the most significant limitation in prevalent bonding processes pertains to the high temperature required, limiting choices of materials and components. As a result of this problem, researchers have turned to bond at low temperature (LT). Unfortunately, the lack of fundamental knowledge on LT bonding procedures and their resulting bond interfaces, limits their application. Here electrical and mechanical properties of LT plasma-assisted-wafer bonding are addressed.

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On-chip decoupling zone for package-stress reduction

Cited by 54 publications

References 6 publications

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Generation of micropatterns of conducting polymers and aluminum using an intermediate-layer lithography approach and some applications

Low Temperature Plasma-Assisted-Wafer-Bonding for MEMS

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