On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

Béguin, Lucas; Jahn, Jan-Philipp; Wolters, Janik; Reindl, Marcus; Huo, Yongheng; Trotta, Rinaldo; Rastelli, Armando; Ding, Fei; Schmidt, Oliver G.; Treutlein, Philipp; Warburton, Richard J.

doi:10.1103/physrevb.97.205304

Cited by 25 publications

(20 citation statements)

References 71 publications

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“…For InGaAs QDs, embedding the QDs in an n-i-p diode has profound advantages: the charge state is locked by Coulomb blockade [26][27][28] ; the charge noise is reduced significantly 29 ; and the exact transition frequency can be tuned in-situ via a gate voltage 3,30 . Such a structure is missing for GaAs QDs 13,16,[22][23][24][25] in previous attempts, charge-stability was not demonstrated 31,32 . A materials issue must be addressed: the barrier material AlGaAs must be doped, yet silicon-doped AlGaAs contains DXcentres 33,34 which both reduce the electron concentration, causing the material to freeze out at low temperatures, and lead to complicated behaviour under illumination.…”

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confidence: 94%

Low-noise GaAs quantum dots for quantum photonics

et al. 2020

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Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons—bandwidth-matched to an atomic quantum-memory—and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an n-i-p-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.

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confidence: 94%

Low-noise GaAs quantum dots for quantum photonics

et al. 2020

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“…To connect a QD to an atomic memory based on rubidium, the QD should emit photons matched both in emission energy and bandwidth to the memory 27 . The emission energy can be matched by using GaAs QDs embedded in AlGaAs 28,29 ; bandwidth matching can be achieved by using a Raman-scheme [30][31][32][33] .…”

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confidence: 99%

Correlations between optical properties and Voronoi-cell area of quantum dots

et al. 2019

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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over µm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved. arXiv:1902.10145v3 [cond-mat.mes-hall]

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“…Inspired by atomic physics, the use of Raman scattering in quantum dots has been used to demonstrate photon energy tuning [14], generation of photons tailored for interfacing with a quantum memory [15], picosecond shaping of single photons [16], and generation of photons coherently superposed across multiple time bins [17].…”

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confidence: 99%

Controllable Photonic Time-Bin Qubits from a Quantum Dot

et al. 2018

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Photonic time-bin qubits are well suited to transmission via optical fibers and waveguide circuits. The states take the form 1 ffiffiffiffi ffi ð2Þ p ðαj0i þ e iϕ βj1iÞ, with j0i and j1i referring to the early and late time bin, respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-holecharged InAs quantum dot, we demonstrate complete control over the phase, ϕ. We show that this photon generation process can be performed deterministically, with only a moderate loss in coherence. Finally, we encode different qubits in different energies of the Raman scattered light, paving the way for wavelengthdivision multiplexing at the single-photon level.

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On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

Cited by 25 publications

References 71 publications

Low-noise GaAs quantum dots for quantum photonics

Low-noise GaAs quantum dots for quantum photonics

Correlations between optical properties and Voronoi-cell area of quantum dots

Controllable Photonic Time-Bin Qubits from a Quantum Dot

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