On-line monitoring of the MOSFET device junction temperature by computation of the threshold voltage

Chen, H.; Pickert, Volker; Atkinson, Dave; Pritchard, L.S.

doi:10.1049/cp:20060147

Cited by 52 publications

(30 citation statements)

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“…This is a wide area of research, with several TSEPs proposed and evaluated [3]. In [4][5][6][7], the threshold voltage is proposed as a TSEP using the known negative temperature coefficient of the threshold voltage to estimate the junction temperature during device switching. However, the time resolution required by the measurement instruments coupled with the background noise makes this a difficult technique to implement especially since 2 sensors are needed.…”

Section: Introductionmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

106

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Section: Introductionmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

106

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“…The second TSEP is the threshold voltage V th . It is determined with a very low current regulation acting on the gate voltage [15,16]. The third TSEP is the gate-emitter voltage under a high current I c .…”

Section: Introductionmentioning

confidence: 99%

Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements

Avenas

Dupont²

2012

Microelectronics Reliability

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a b s t r a c tJunction temperature evaluation is a key parameter used to control a power module assembly. But measuring the junction temperature by thermo-sensitive electrical parameters (TSEPs) does not reveal the actual temperature of the semiconductor device. In this paper, a specific electronic board used to compare four common TSEPs of IGBT chips is presented. For this comparison, two dissipation modes are used: dissipation in active and saturation regions. In order to have referential measurements we carried out surface temperature measurements of IGBT chips with an infrared (IR) camera. A dedicated numerical tool is presented to estimate the mean surface temperature of active region. In the case of a single IGBT chip, the comparison between IR and TSEP measurements show that the best studied parameter (in terms of robustness and usability) is the gate emitter voltage.

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“…Early attempts [35] to measure the threshold voltage suffer from rapid transient changes in the turn-on time. As a preliminary improvement, the gate-source voltage rise and drain current rise are directly sampled and monitored by the DSP in this paper.…”

Section: A Measurements During Switching Transientsmentioning

confidence: 99%

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

168

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Abstract-This paper presents a novel real-time power device temperature estimation method which monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as on-line health monitoring for power electronic systems but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids and even delamination within the device components, especially in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.

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On-line monitoring of the MOSFET device junction temperature by computation of the threshold voltage

Cited by 52 publications

References 0 publications

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

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