On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Abstract

In this paper we report on the possibility to use particle-based Monte Carlo techniques to incorporate all relevant quantum effects in the simulation of semiconductor nanotransistors. Starting from the conventional Monte Carlo approach within the semi-classical Boltzmann approximation, we develop a multi-subband description of transport to include quantization in ultra-thin body devices. This technique is then extended to the particle simulation of quantum transport within the Wigner formulation. This new simulator includes all expected quantum effects in nano-transistors and all relevant scattering mechanisms which are taken into account the same way as in Boltzmann simulation. This work is illustrated by analyzing the device operation and performance of multi-gate nano-transistors in a convenient range of channel lengths and thicknesses to separate the influence of all relevant effects: significant quantization effects occurs for thickness smaller than 5 nm and wave mechanical transport effects manifest themselves for channel length smaller than 10 nm. We also show that scattering mechanisms still have an important influence in nanoscaled double-gate transistors, both in the intrinsic part of the channel and in the resistive lateral extensions.

Investigation of Empty Space in Nanoscale Double Gate (ESDG) MOSFET for High Speed Digital Circuit Applications

“…1(c). The close comparison between I ds with and without using quantum model validated our assumption that quantum effects are not so pronounced at 60 nm channel length [13]. Further the same simulation parameters and models are used to compare the various device architectures.…”

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

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Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

“…We consider here the multi-subband simulation of ultrascaled end-of-roadmap double gate MOSFETs using both semiclassical [61][62][63] and quantum [43,[64][65][66] Monte Carlo simulations. A schematic cross-section of the simulated structure is presented in Fig.…”