2021
DOI: 10.1109/jsen.2021.3106667
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On the Air Buoyancy Effect in MEMS-Based Gravity Sensors for High Resolution Gravity Measurements

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Cited by 12 publications
(3 citation statements)
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“…The change in atmospheric pressure can affect the output of the MEMS gravity sensor in the form of the buoyant force, leading to a gravity-pressure coefficient of 501.5 μGal/hPa [23]. This possesses one of the major error sources for MEMS gravity sensors operating in atmospheric environment, especially considering the inaccuracy in the measurement of atmospheric pressure to remove the buoyant force effect.…”
Section: B Vacuum Chamber Systemmentioning
confidence: 99%
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“…The change in atmospheric pressure can affect the output of the MEMS gravity sensor in the form of the buoyant force, leading to a gravity-pressure coefficient of 501.5 μGal/hPa [23]. This possesses one of the major error sources for MEMS gravity sensors operating in atmospheric environment, especially considering the inaccuracy in the measurement of atmospheric pressure to remove the buoyant force effect.…”
Section: B Vacuum Chamber Systemmentioning
confidence: 99%
“…However, the structures in [20]- [22] employ quasi-zero springs with low natural frequencies to improve the sensitivity of the MEMS gravity sensors, resulting in a high requirement for the fabrication and installation of the MEMS gravimeters in practical use. To tackle this problem, a MEMS gravity sensor with a linear spring design (f0 = 14 Hz) and a capacitive displacement transducer was developed by Xu et al, and successfully observed Earth tide signals in an atmosphere environment by removing the effect of the ambient pressure fluctuations within a temperature-controlled system [23]. In addition to MEMS gravity sensors that are typically based on displacement transducers, MEMS devices based on vibrating elements can also be used to gravity measurements by tracking the frequency shift of the element.…”
Section: Introductionmentioning
confidence: 99%
“…Temperature control is critical in modern electronics, due to the multiple effects of temperature on the performance of almost all microelectronic devices [ 1 – 3 ], as diverse as accuracy [ 4 ], sensitivity [ 5 , 6 ], reliability [ 7 , 8 ], stability [ 9 , 10 ] and adjustability [ 11 14 ] of electronic components. Typically, temperature changes mainly come from diurnal and seasonal temperature variations of the external environment [ 15 ] (even a fluctuation of ~ 40 K/day or ~ 80 K/year) and the inevitable heating effect caused by operating internal high-power components (e.g., near-field wireless transmission of data [ 16 , 17 ] and power [ 18 , 19 ]) in the same microsystems.…”
Section: Introductionmentioning
confidence: 99%