On the anisotropy of dielectric permittivity in single crystal lanthanum aluminate substrates

Makeev, Yu. G.; Motornenko, A. P.; Cherpak, N. T.; Babiichuk, I. P.; Kosmyna, M. B.

doi:10.1134/1.1467281

Cited by 17 publications

(5 citation statements)

References 4 publications

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“…We find r = 24.3 for LaAlO 3 and r = 8.3 for MgAl 2 O 4 . We note that these values agree with previously measured values at temperatures above 70 K (23-25 and 8.3 respectively), indicating no large shift in the dielectric permittivity of either substrate with cooling [35,36].…”

Section: Resultssupporting

confidence: 92%

Ternary metal oxide substrates for superconducting circuits

Degnan¹,

He²,

Frieiro³

et al. 2022

Mater. Quantum. Technol.

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Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build a practical quantum computer. One potential path towards higher coherence of superconducting quantum devices is to explore new substrate materials with a reduced density of imperfections due to inherently diﬀerent surface chemistries. Here, we examine two ternary metal oxide materials, spinel (MgAl2O4) and lanthanum aluminate (LaAlO3), with a focus on surface and interface characterization and preparation. Devices fabricated on LaAlO3 have quality factors three times higher than those of earlier devices, which we attribute to a reduction in the interfacial disorder. MgAl2O4) is a new material in superconducting quantum devices, and even in the presence of signiﬁcant surface disorder, it consistently outperforms LaAlO3. Our results highlight the importance of materials exploration, substrate preparation, and characterization for identifying materials suitable for high-performance superconducting quantum circuitry.

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Section: Resultssupporting

confidence: 92%

Ternary metal oxide substrates for superconducting circuits

Degnan¹,

He²,

Frieiro³

et al. 2022

Mater. Quantum. Technol.

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“…In addition, the LaAlO 3 film is a potential buffer layer for the growth of various perovskite films. − Furthermore, because of the low conduction band offset, LaAlO 3 can be utilized as a charge storage layer in the fields of charge trap flash devices . In particular, LaAlO 3 is a powerful candidate for high- k materials in advanced Si-based complementary metal-oxide-semiconductor (CMOS) devices , because of its own unique features. ,− …”

Section: Introductionmentioning

confidence: 99%

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

Chen

et al. 2015

J. Phys. Chem. C

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The first-principles thermodynamics characterization of the stabilities and electronic properties of the LaAlO3 (001) and (110) polar surfaces was systematically performed using density functional theory methods. Two types of polar surfaces, including the terminations along the (001) orientation (the LaO-and AlO2-terminated surfaces) and (110) orientation (the LaAlO-, O2-, La-, AlO-, and O-terminated surfaces),were considered in this study. The computational results of the charge redistributions and geometries confirm that the electronic structure change and surface reconstruction should be responsible for the cancellation of the macroscopic dipole moments of these polar terminations, which stabilizes them. The charge neutralization can also be achieved by the charge redistribution of surface atoms. Furthermore, using the surface grand potential method, in which the effect of the chemical environment on surface stability is considered, we constructed the stability phase diagram of the LaAlO3 (001) and (110) polar surfaces. The results indicate that only the O (110), LaO (001) and AlO2 (001) terminations have corresponding stability domains and can be considered targets in further experimental investigations.

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“…3) Furthermore, a ZrO 2 or HfO 2 layer on silicon tends to form an interfacial silicate layer, which makes it difficult to achieve a thin effective oxide thickness. Therefore, LaAlO 3 that is thermally stable in contact with a Si substrate has become a promising alternative epitaxial gate oxide due to its high dielectric constant of 23 to 25, [4][5][6] a wide band gap of 5.6 to 6.5 eV, 7,8) and a high crystallization temperature. Moreover, crystalline LaAlO 3 can be grown epitaxially on a Si substrate, 3,9) since their lattice constants are very similar, exhibiting only a small difference of 1.3%.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study on Intrinsic Point Defects in Rhombohedral LaAlO₃ and Their Effects on Electrical Properties

Xie

Cheng

Xiao

et al. 2012

Jpn. J. Appl. Phys.

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Formation energies and energy levels of various neutral and charged defects in bulk rhombohedral LaAlO3 are calculated numerically in different equilibrium conditions under different oxygen partial pressures, using first-principles plane-wave calculations. The roles of such defects in electrical properties of LaAlO3 are also discussed. The results obtained by calculations show that the formation energy becomes low for oxygen interstitial if LaAlO3 is in an oxygen-rich condition. In contrast, an oxygen vacancy is easily formed in a condition where oxygen is deficient and metal elements are relatively rich, even if the oxygen partial pressure is high. These results explain well the concentration change of constituent elements in LaAlO3 under different treatment atmospheres. Furthermore, the calculations can interpret a large tunnelling current that is often observed in a metal–oxide–silicon structure using LaAlO3 as the oxide layer, since the O vacancy has an energy level near the valence band maximum of Si.

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On the anisotropy of dielectric permittivity in single crystal lanthanum aluminate substrates

Cited by 17 publications

References 4 publications

Ternary metal oxide substrates for superconducting circuits

Ternary metal oxide substrates for superconducting circuits

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

First-Principles Study on Intrinsic Point Defects in Rhombohedral LaAlO₃ and Their Effects on Electrical Properties

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On the anisotropy of dielectric permittivity in single crystal lanthanum aluminate substrates

Cited by 17 publications

References 4 publications

Ternary metal oxide substrates for superconducting circuits

Ternary metal oxide substrates for superconducting circuits

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations

First-Principles Study on Intrinsic Point Defects in Rhombohedral LaAlO3 and Their Effects on Electrical Properties

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Product

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First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

First-Principles Study on Intrinsic Point Defects in Rhombohedral LaAlO₃ and Their Effects on Electrical Properties