On the capacitance of crystalline silicon solar cells in steady state

Barro, F.I.; Sane, Moustapha; Zouma, Bernard

doi:10.3906/fiz-1408-3

Cited by 12 publications

(9 citation statements)

References 9 publications

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“…Some studies have also been done on light illumination effects on monofacial [2] [3] [5] [6], bifacial [1] [4] [6] [7] [8] and amorphous [8] solar cells. It appears through these studies that the increase of illumination power comes with an increase of the density of carriers in the base of the solar cell [9] [10].…”

Section: Introductionmentioning

confidence: 99%

3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

Soro¹,

Zoungrana²,

Zerbo³

et al. 2017

SGRE

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The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are: the mobility of solar cell carriers (electrons and holes), their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μ n, (T) μ p (T)). Then, the resolution of the continuity equation, which is a function of the carriers gradient electric field and the carriers mobility, leads to the expressions of the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of 292 Smart Grid and Renewable Energy the temperature. We observe also that with the increase of the temperature, the density of carriers in the base of the solar cell in short circuit and open voltage operating modes increases. In intermediate operating mode, the density of carriers increases also with the temperature but it is function of the base depth.

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Section: Introductionmentioning

confidence: 99%

3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

Soro¹,

Zoungrana²,

Zerbo³

et al. 2017

SGRE

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“…We see that whatever the capacitance under darkness Co is independent of the electric field polarization. The intercept point obtained with the capacitance axis is the dark capacitance value (Sane et al, 2013;Sahin et al, 2015;Barro et al, 2015). The obtained value with this method is: Figure 4 enables us to observe an increase of the capacitance when the photovoltage increases.…”

Section: Resultsmentioning

confidence: 89%

“…Capacitance study: Diffusing capacitance of the solar cell is considered as the ability of the resulting charge variation during the process of diffusion within the solar cell (Sane et al, 2013;Hamidou et al, 2013;Diao et al, 2014;Barro et al, 2015). It is given by the following equation:…”

Section: Resultsmentioning

confidence: 99%

Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination

Şahin¹

2016

jist

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ABSTRACT:The aim of this work is to present a theorical study of a capacitance voltage characterization of a bifacial silicon solar cell under polychromatic modulated illumination. From the excess minority carrier's density in the solar cell, the photocurrent density and the photovoltage are derived. The diffusion capacitance was measured with both as a function of voltage and the junction surface recombination velocity. Electric polarization effects are shown through different C-V plots. For all the studied parameters, we exhibited the effect of electric field parameters on the capacitance voltage characterization and the operating point of the cell through the junction recombination velocity.Keywords: Capacitance, electric field, silicon solar cell ÖZET: Bu çalışmanın amacı, geniş spektrumlu aydınlatma altında iki yüzeyli silikon güneş pilinin difüzyon kapasitansı ve aşırı azınlık taşıyıcı yoğunluğu teorik çalışmasının sunulmasıdır. Güneş pili aşırı azınlık taşıyıcısından fotoakım ve fotogerilim yoğunluğu türetilmiştir. Difüzyon kapasitansı hem voltajın fonksiyonu ile hem de bağlantı yüzeyi rekombinasyon hızı ile ölçülmüştür. Elektrik polarizasyon etkileri farklı C-V (Difüzyon kapasitansı-Gerilim) grafikleri ile gösterilmiştir. Tüm çalışılan parametreler için, karakterizasyon voltaj kapasitansının elektrik alan parametreleri üzerindeki etkisi ve kavşak rekombinasyon hızı boyunca hücrenin operasyon noktasının etkisi gösterilmiştir.

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“…In the remainder of this study, the contribution of the issuer as well as the crystalline field that exists within the base has been neglected [5]. The solar cell is discussed in one dimension with the original axis taken at the junction.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Effect of Temperature on the Capacitance of a Silicon Solar Cell in Static Regime

Şahin¹

2018

EPE

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This work was based mainly on the capacitance of a silicon solar cell monofaciale in static conditions under monochromatic illumination and under the influence of temperature. Solving the continuity equation for excess minority carrier's charge density in the base of the solar cell resulting in the term of the temperature equation in the presence of an optical source. The latter has allowed us to obtain the photocurrent density and photovoltage. Subsequently we studied the capacitance situation of open circuit and short circuit depending on the temperature. Finally with the determination of capacitance under C 0 darkness.

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On the capacitance of crystalline silicon solar cells in steady state

Cited by 12 publications

References 9 publications

3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination

Effect of Temperature on the Capacitance of a Silicon Solar Cell in Static Regime

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