On the chloride vapor-phase epitaxy growth of GaN and its characterization

Varadarajan, E.; Puviarasu, P.; Kumar, J.; Dhanasekaran, R.

doi:10.1016/j.jcrysgro.2003.08.021

Cited by 15 publications

(8 citation statements)

References 18 publications

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“…Only one set of reflection peaks from ) 203 2 ( plane has been observed with 60° spacing. This indicates that the GaN films grown on sapphire are single crystal (Varadarajan et al 2003). shows the Raman spectra of the Cl-VPE grown GaN layers at different temperatures.…”

Section: Structural Optical and Electrical Properties Of Vpe Grown Gmentioning

confidence: 89%

Progress in III-nitrides: Process issue and purity perspective

Kumar

2005

Bull Mater Sci

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The growth of good quality layers of gallium nitride (GaN) as suitable for epitaxial growth is of great technological importance. Chloride vapour phase epitaxy (Cl-VPE) has been employed to grow good quality layers of GaN. The grown layers have been extensively characterized for their structural and optical properties. MOVPE grown GaN layers have been used to address process issues on device structuring and fabrication. GaN samples with different transition metal dopants have been synthesized and their usefulness as semi-magnetic materials, which are also identified as dilute magnetic semiconductors (DMS), have been evaluated. Better results have been obtained on the magnetic characteristics of GaN with ruthenium as the dopant. Nano dimensional structures of GaN have been obtained with excellent control of the growth parameters.

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Section: Structural Optical and Electrical Properties Of Vpe Grown Gmentioning

confidence: 89%

Progress in III-nitrides: Process issue and purity perspective

Kumar

2005

Bull Mater Sci

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“…GaCl 3 was transported in the reactor using N 2 as the carrier gas. The gallium nitride (GaN) films were deposited on (0 0 0 1) Al 2 O 3 substrate, as discussed in the literature [10]. The growth of GaN films was carried out at the growth temperatures of 1243 K and 1263 K at a fixed flow rate (2 SLM) of the ammonia gas.…”

Section: Methodsmentioning

confidence: 99%

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Puviarasu

2017

Materials Science-Poland

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The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1) sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE) have been studied using optical microscope. Significant surface morphology changes have been observed in correlation to the growth temperature and etching time. Also optical properties of the as grown and high-energy silicon (Si) ion irradiated gallium nitride (GaN) epilayers were studied using monochromatic ellipsometry. The effect of ion fluences on the refractive index of the GaN has been investigated and it has been found to decrease with an increase of ion fluence. This decrease is attributed to irradiation-induced defects and polycrystallization which plays an important role in determining the optical properties of silicon (Si) ion irradiated GaN layers.

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“…GaN films have been grown as described in our previous report. The details of growth parameters are discussed elsewhere [5]. The growth of GaN films was carried out at various growth temperatures and at a fixed flow rates (2 slm) of the ammonia gas.…”

Section: Methodsmentioning

confidence: 99%