Colloidal
quantum dot solar cells (CQDSCs) are good candidates
for low-cost power generators, due to their wide light-response range,
high theoretical efficiency, and solution processability. Nevertheless,
the generally used metal oxide electron transport layer (MOETL) induced
various problems, blocking the performance enhancement of CQDSCs,
such as band alignment mismatch, high-energy photon loss, and photoinduced
interfacial degradation. In the work described herein, we constructed
high-efficiency and air-stable MOETL-free solar cells based on quantum
junction device structure, through manipulating the semiconductor
and surface-trap properties of PbS CQDs by ligand engineering. A record
power conversion efficiency of 10.5% was successfully achieved in
our MOETL-free quantum junction solar cells (QJSCs). Increased photogenerated
current density was obtained in MOETL-free QJSCs because of the ultraviolet
and near-infrared photoresponse enhancement. These unencapsulated
MOETL-free QJSCs show long-term air-storage stability (>4000 h).
Our
work successfully demonstrates the MOETL-free quantum junction as
a high-efficiency and stable structure for solar cells, paving a way
for application of CQDSCs in the full-spectrum, scalable-production,
portable, and flexible photovoltaic technology.