On the cyclic threshold voltage shift of dynamic negative-bias temperature instability

Teo, Ziqiang; Boo, A. A.; Ang, Diing Shenp; Leong, K. C.

doi:10.1109/irps.2011.5784611

Cited by 19 publications

(17 citation statements)

References 12 publications

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“…The optional bake steps, typically performed for 1h at 350 • C, are motivated by the observation that in large-area devices such a bake restores the initial state prior to degradation [15,16]. Furthermore, it has been observed that upon repeated stress/recovery cycling the amount of recoverable defects typically decreases with time [6,7,9,17,18], which is the macroscopic (large area) equivalent of defect volatility. In large-area devices it has been found that baking can also reverse this net loss of defects [12].…”

Section: Methodsmentioning

confidence: 99%

On the volatility of oxide defects: Activation, deactivation, and transformation

Grasser

Wahl

Goes

et al. 2015

2015 IEEE International Reliability Physics Symposium

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Recent studies have clearly shown that oxide defects are more complicated than typically assumed in simple twostate models, which only consider a neutral and a charged state. In particular, oxide defects can be volatile, meaning that they can be deactivated and re-activated at the same site with the same properties. In addition, these defects can transform and change their properties. The details of all these processes are presently unknown and poorly characterized. Here we employ time-dependent defect spectroscopy (TDDS) to more closely study the changes occurring at the defect sites. Our findings suggest that these changes are ubiquitous and must be an essential aspect of our understanding of oxide defects. Using density-functionaltheory (DFT) calculations, we propose hydrogen-defect interactions consistent with our observations. Our results suggest that standard defect characterization methods, such as the analysis of random telegraph noise (RTN), will typically only provide a snapshot of the defect landscape which is subject to change anytime during device operation.

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Section: Methodsmentioning

confidence: 99%

On the volatility of oxide defects: Activation, deactivation, and transformation

Grasser

Wahl

Goes

et al. 2015

2015 IEEE International Reliability Physics Symposium

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“…Figure 8. The oxygen vacancy defect model based on the first-principles simulation [15] [16]. For SiO2, a large fraction (>90%) of the oxygen vacancy defects exhibit little structural relaxation upon the capture of a hole.…”

Section: Acknowledgementmentioning

confidence: 99%

Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs

Gao

Ang

Young³

et al. 2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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Under a given stress field, the recoverable component (R) for HfO 2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transformation into a more permanent form (P). We show that those switching hole traps (SHTs) responsible for the R share the same origin as a portion of bulk traps responsible for the stress induced leakage current (SILC) and 1/f noise of the high-k gate p-MOSFET. When the density of SHTs is constant, no increase in 1/f noise and SILC, i.e. no apparent generation of bulk traps, is observed after NBTI stress. An increase in the SILC and 1/f noise, which implies the generation of bulk traps, is observed when part of these SHTs are transformed into relatively permanent bulk traps, allowing them to be sensed by the slow SILC and 1/f noise measurements.

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“…Compared to a conventional DC stress, AC stress patterns can significantly reduce the accumulated degradation [1][2][3][4]. In order to properly predict the potentially enormous lifetime benefits, this feature has to be fully understood.…”

Section: Introductionmentioning

confidence: 99%

On the frequency dependence of the bias temperature instability

Kaczer

Reisinger

Wagner

et al. 2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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Abstract-An accurate understanding of the duty-factor and frequency dependence of the bias temperature instability (BTI) is essential since it can transfer to significant lifetime benefits. Contradictory reports regarding the frequency dependence have been published in literature, with particularly older studies and those interpreted in the framework of the reaction-diffusion model claiming BTI to be frequency-independent. Newer studies, on the other hand, clearly show a frequency-dependent component of BTI. Here we discuss this frequency dependence using the recently suggested capture/emission time map model, which explains BTI as a collection of a large number of independent first-order reactions of defects with two states. While this model can explain most features observed in DC and low-frequency AC stress experiments, it does not fully capture the experimentally observed frequency and duty-factor dependence. However, when a more accurate defect model is considered, which describes charging of the defect via an intermediate state, good accuracy with experimental data is obtained.

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On the cyclic threshold voltage shift of dynamic negative-bias temperature instability

Cited by 19 publications

References 12 publications

On the volatility of oxide defects: Activation, deactivation, and transformation

On the volatility of oxide defects: Activation, deactivation, and transformation

Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs

On the frequency dependence of the bias temperature instability

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