On the Dependence of the Switching Time of Barium Titanate Crystals on Their Thickness

Drougard, M. E.; Landauer, Rolf

doi:10.1063/1.1735032

Cited by 136 publications

(37 citation statements)

References 8 publications

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“…The presence of such layers coincides well with several previous findings [14][15][16]. This layer does not exhibit ferroelectric properties and thus acts as an additional dielectric layer between polarization charge and screening charge in the connected electrode.…”

Section: Trapping Mechanismsupporting

confidence: 91%

Interface charging effects in ferroelectric ZnO–BaTiO₃ field‐effect transistor heterostructures

Schwinkendorf

Lorenz

Hochmuth

et al. 2013

Physica Status Solidi (a)

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Ferroelectric field-effect transistors (FeFETs) with n-type ZnO channel and BaTiO 3 gate oxide show an unexpected reversed switching behavior in terms of the polarity of the gate voltage. The device's source-drain current is reduced after applying an external gate voltage pulse which polarizes the BaTiO 3 such that the device is meant to be in the on-state. Subsequent switching to the off-state with the opposite voltage does not influence the source-drain current. Furthermore, repeated switching cycles with increasing voltages result in a shift of the onset gate voltage in the transfer characteristics of the FeFETs. The observed switching behavior is explained by electron trapping at the ZnO/BaTiO 3 interface. In addition the charge accumulation and time, temperature and illumination dependent discharging effects are demonstrated. From currentvoltage measurements we derive the trapped electron sheet density in dependence of the gate voltage. The interface charge density is in the order of 1 C m À2 .

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Section: Trapping Mechanismsupporting

confidence: 91%

Interface charging effects in ferroelectric ZnO–BaTiO₃ field‐effect transistor heterostructures

Schwinkendorf

Lorenz

Hochmuth

et al. 2013

Physica Status Solidi (a)

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“…In spite of extensive studies, the physics of the fatigue remains poorly understood. Various mechanisms were considered over the years [1][2][3][4][5][6][7][8]. In many cases the deterioration of the switching behavior, like the loss of the coercive force and of the squareness of hysteresis loop, were attributed to the growth of a 'passive layer' at the ferroelectric-electrode interface [1,3,6], or to the pinning of domain walls by defects [2,4].…”

mentioning

confidence: 99%

Abrupt Appearance of the Domain Pattern and Fatigue of Thin Ferroelectric Films

2000

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We study the domain structure in ferroelectric thin films with a 'passive' layer (material with damaged ferroelectric properties) at the interface between the film and electrodes within a continuous medium approximation. An abrupt transition from a monodomain to a polydomain state has been found with the increase of the 'passive' layer thickness d. The domain width changes very quickly at the transition (exponentially with d −2 ). We have estimated the dielectric response dP/dE (the slope of the hysteresis loop) in the 'fatigued' multidomain state and found that it is in agreement with experiment, assuming realistic parameters of the layer. We derive a simple universal relation for the dielectric response, which scales as 1/d, involving only the properties of the passive layer. This relation qualitatively reproduces the evolution of the hysteresis loop in fatigued samples and it could be tested with controlled experiments. It is expected that the coercive field should increase with decreasing lateral size of the film. We believe that specific properties of the domain structure under bias voltage in ferroelectrics with a passive layer can resolve the long-standing 'paradox of the coercive field 77.80.Dj, 84.32.Tt, 85.50.+k Recent studies of thin ferroelectric films have revived interest in properties of the ferroelectric domain structures. It became clear that some basic aspects of these properties remain unexplored, whereas they are of key importance for applications. For instance, the progressive loss of switchable polarization after repeated switching cycles, i.e. polarization fatigue, is a serious problem in device applications of ferroelectrics. In spite of extensive studies, the physics of the fatigue remains poorly understood. Various mechanisms were considered over the years [1][2][3][4][5][6][7][8]. In many cases the deterioration of the switching behavior, like the loss of the coercive force and of the squareness of hysteresis loop, were attributed to the growth of a 'passive layer' at the ferroelectric-electrode interface [1,3,6], or to the pinning of domain walls by defects [2,4]. In this paper, we study the effects of a passive layer (material with damaged ferroelectric properties). We assume an ideal infinite ferroelectric film and treat it within the continuous medium approximation. The model exhibits very interesting properties relevant for real systems.The passive layer leads to the appearance of a depolarizing field in the ferroelectric, so that the system would tend to transform to a polydomain state in order to reduce the field. There is, therefore, a transition between the monodomain state, when the thickness d of the passive layer is zero, to a polydomain state otherwise. What is the nature of this transition? This is the main theoretical question we address in this paper.For a short-circuited infinite ferroelectric plate, as we shall show, the domain structure exists for any value of the passive layer thickness, in disagreement with some earlier results [9]. A surprising feature of the ...

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“…However, there is also a variation in Curie constant present, which it is premature to identify as of fundamental or materials-related origin. In conclusion we have modelled the 'dead layer' phenomenon at ferroelectric surfaces, proposed originally by Drougard and Landauer [1], by means of an extension to the surface of the Thomas theory of ferroelectricity. The experimental data seem to provide considerable support for the detailed predictions of the present theoretical approach.…”

Section: Application To Stomentioning

confidence: 97%

“…Early on, a qualitative proposal was made by Dougard and Landauer [1] that a dielectrically dead layer existed at the surface of ferroelectric films. Can this layer be the origin of the reduction in dielectric constant in thin ferroelectric films?…”

Section: Introductionmentioning

confidence: 99%

Is there an intrinsic dead layer effect at ferroelectric surfaces?

Zhou

Newns

1998

Superlattices and Microstructures

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On the Dependence of the Switching Time of Barium Titanate Crystals on Their Thickness

Cited by 136 publications

References 8 publications

Interface charging effects in ferroelectric ZnO–BaTiO₃ field‐effect transistor heterostructures

Interface charging effects in ferroelectric ZnO–BaTiO₃ field‐effect transistor heterostructures

Abrupt Appearance of the Domain Pattern and Fatigue of Thin Ferroelectric Films

Is there an intrinsic dead layer effect at ferroelectric surfaces?

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On the Dependence of the Switching Time of Barium Titanate Crystals on Their Thickness

Cited by 136 publications

References 8 publications

Interface charging effects in ferroelectric ZnO–BaTiO3 field‐effect transistor heterostructures

Interface charging effects in ferroelectric ZnO–BaTiO3 field‐effect transistor heterostructures

Abrupt Appearance of the Domain Pattern and Fatigue of Thin Ferroelectric Films

Is there an intrinsic dead layer effect at ferroelectric surfaces?

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Product

Resources

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Interface charging effects in ferroelectric ZnO–BaTiO₃ field‐effect transistor heterostructures

Interface charging effects in ferroelectric ZnO–BaTiO₃ field‐effect transistor heterostructures