On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)

Tecimer, H.; Uslu, Habibe; Alahmed, Z. A.; Yakuphanoğlu, F.; Altındal, Ş.

doi:10.1016/j.compositesb.2013.09.040

Cited by 87 publications

(22 citation statements)

References 27 publications

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“…It can be noticed that the γ-ray irradiation decrease the relaxation time of all samples are in good agreement with results obtained by Tay et al [41]. This decrease is attributed to trapping and recombination centers produced by γ-ray irradiation [42]. An interface state is an allowed level within the forbidden gap.…”

Section: Accepted Manuscriptsupporting

confidence: 81%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Accepted Manuscriptsupporting

confidence: 81%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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“…Interface states capacitance may contribute the measure capacitance at low frequencies. Hence, total measured capacitance is higher than bare capacitance [28,39]. If the measurements are performed at sufficiently high frequencies, the interface state charges cannot follow the voltage signal, and do not contribute to the measured capacitance.…”

Section: Resultsmentioning

confidence: 94%

“…Conductance increases very slightly before the maxima while decreasing in after the maxima. Before the maxima especially in accumulation regions the dominant effects on the conductance measurements is series resistance, however the interface states are more effective in the depletion and inversion regions [28]. Therefore, changes in distribution of series resistance and interface state with irradiation may be the reason of the variations in conductance characteristics.…”

Section: Resultsmentioning

confidence: 98%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/ x-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/x-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/x curves has been shifted toward the negative voltages. Moreover, the series resistance (R s ) and density of interface states increased with increasing in irradiation dose and density of interface states (D it ) were calculated as order of 10 12 eV -1 cm -2 prior to and after irradiation. Due to presence and variations in the R s values, the corrected and the measured C-V and G/x-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.

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“…At low frequencies interface states act like a yield capacitance, hence this yield capacitance contributes to the measured capacitance characteristics. However, at higher frequencies, since the interface states do not have enough time to follow the applied voltage signal, the contribution of interface states to the measured capacitance is almost zero [25][26][27].…”

Section: Resultsmentioning

confidence: 98%

Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

Kaya¹,

Yılmaz

Kahraman

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)

Cited by 87 publications

References 27 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

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