On the growth process of Cu2ZnSn(S,Se)4 absorber layer formed by selenizing Cu–ZnS–SnS precursors and its photovoltaic performance

Li, Jianjun; Zhang, Yi; Wang, Hongxia; Wu, Li; Wang, Jiguo; Liu, Wei; Zhou, Zhiqiang; He, Qiang; Sun, Yun

doi:10.1016/j.solmat.2014.09.023

Cited by 45 publications

(21 citation statements)

References 35 publications

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“…CZTSe thin-fi lm solar cells were fabricated as the process described in ref. [22]. The active area of each CZTSSe solar cell is 0.345 cm 2 .…”

Section: Methodsmentioning

confidence: 99%

“…Based on the formation mechanism of CZTSe, the alloys' layer (with a structure of Cu and Sn on the top and Zn at the bottom) will be consumed and turned into CZTSe layer from the surface to the bottom gradually. [ 22,23 ] The compact alloys' layer in sample B-2 will block the diffusion of the Se to Mo layer during subsequent high temperature annealing process before it is consumed. Moreover, the CZTSe layer which formed based on sample B-2 is more compact and with less grain boundaries than that formed based on sample B-1.…”

Section: Tailoring the Formation Of The Mose 2 Layermentioning

confidence: 99%

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A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe₂ for Efficient Cu₂ZnSnSe₄ Solar Cells

Zhang

Zhao

et al. 2015

Advanced Energy Materials

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156

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The influence of a prealloying process on the formation of MoSe2 and thus on the performance of Cu2ZnSnSe4 (CZTSe) solar cells is investigated using sputtering deposition and post‐annealing approaches. The dense alloy layer, which is made by a low‐temperature prealloying process, acts as a temporary Se diffusion barrier during a subsequent high‐temperature selenization process. The formation of thick interfacial MoSe2 can be suppressed effectively by this temporary barrier, cooperating with subsequent quick formation of compact CZTSe layer. The thickness of interfacial MoSe2 layer in CZTSe solar cells can be tailored by adjusting the preannealing process during selenization. As a consequence, the series resistance of CZTSe solar cells is reduced to a low level (≈0.6 Ω cm2), and the performance of CZTSe solar cells is improved significantly. A CZTSe solar cell with efficiency of 8.7% is fabricated.

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“…CZTSe thin-fi lm solar cells were fabricated as the process described in ref. [22]. The active area of each CZTSSe solar cell is 0.345 cm 2 .…”

Section: Methodsmentioning

confidence: 99%

Section: Tailoring the Formation Of The Mose 2 Layermentioning

confidence: 99%

A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe₂ for Efficient Cu₂ZnSnSe₄ Solar Cells

Zhang

Zhao

et al. 2015

Advanced Energy Materials

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156

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“…This was followed by the deposition of the window layer consisting of 50 nm i -ZnO and 500 nm ZnO : Al layers by sputtering. The cell was completed by deposition of Ni/Al grid contact by electron beam evaporation 36 .…”

Section: Fabrication Of Czts Solar Cellmentioning

confidence: 99%

Effects of metal ion concentration on electrodeposited CuZnSn film and its application in kesterite Cu₂ZnSnS₄ solar cells

Hreid

Zhang

et al. 2015

RSC Adv.

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In this work, the effects of the concentrations of Cu (II), Zn (II) and Sn (II) ions in electrolytic bath solution on the properties of electrochemically deposited CuZnSn (CZT) films were investigated. The study of the composition of the CZT film has shown that the metallic content (relative atomic ratio) in the film increased linearly with the increase of the metal ion concentration. It is the first time that the relationship of the compositions of the alloy phases in the co-electrodeposited CZT film with the concentration of metal ions was revealed. The results have confirmed that the formantion and content of Cu6Sn5 and Cu5Zn8 alloy phases in the film were directly controlled by the concentration of Cu (II). SEM measurements have shown that Sn (II) had significant impacts on the film morphology which became more porous as a result of the bigger nucleation size of tin. The changes of surface properties of the films was also confirmed by chronoamperometry characteristic (i -t) deposition curve. By optimization of the metal ions concentrations in the electrolyte solution, a copperpoor and zinc-rich kesterite Cu2ZnSnS4 (CZTS) film was synthesized by sulfurization of the deposited CZT film. The solar cell with the CZTS film showed an energy conversion efficiency of 2.15% under the illumination intensity of 100 mW cm -2 .

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“…The Katagiri group reported that a CZTS thin film solar cell using a Cu/SnS/ZnS precursor instead of Sn and Zn (metallic precursor) achieved an improved power conversion efficiency by reducing the voids and defects in the film [12]. The effect of the stacking order of the precursor on the properties of the synthesized CZTS films was studied, and the Cu/SnS/ZnS stacking order was observed with no secondary phase, a uniform surface and an improved device performance when compared to that of other stacking orders [13]. However, the ZnS precursor remained as solid state material during sulfurization due to its relatively high melting temperature, which retarded the transformation to CZTS phase and resulted in a secondary phase that was present in the CZTS film [14].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Cu2ZnSnS4 thin films and solar cell performance using Zn target with ZnS target

Lim

Khalkar

et al. 2015

Journal of Alloys and Compounds

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On the growth process of Cu2ZnSn(S,Se)4 absorber layer formed by selenizing Cu–ZnS–SnS precursors and its photovoltaic performance

Cited by 45 publications

References 35 publications

A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe₂ for Efficient Cu₂ZnSnSe₄ Solar Cells

A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe₂ for Efficient Cu₂ZnSnSe₄ Solar Cells

Effects of metal ion concentration on electrodeposited CuZnSn film and its application in kesterite Cu₂ZnSnS₄ solar cells

Comparison of Cu2ZnSnS4 thin films and solar cell performance using Zn target with ZnS target

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On the growth process of Cu2ZnSn(S,Se)4 absorber layer formed by selenizing Cu–ZnS–SnS precursors and its photovoltaic performance

Cited by 45 publications

References 35 publications

A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells

A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells

Effects of metal ion concentration on electrodeposited CuZnSn film and its application in kesterite Cu2ZnSnS4 solar cells

Comparison of Cu2ZnSnS4 thin films and solar cell performance using Zn target with ZnS target

Contact Info

Product

Resources

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A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe₂ for Efficient Cu₂ZnSnSe₄ Solar Cells

A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe₂ for Efficient Cu₂ZnSnSe₄ Solar Cells

Effects of metal ion concentration on electrodeposited CuZnSn film and its application in kesterite Cu₂ZnSnS₄ solar cells