On the hot-zone design of Czochralski silicon growth for photovoltaic applications

Huang, Li-Hsin; Lee, P.C.; Hsieh, C.K.; Hsu, W. C.; Lan, C.W.

doi:10.1016/j.jcrysgro.2003.09.039

Cited by 35 publications

(13 citation statements)

References 10 publications

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“…Unlike the sc‐Si grown by the Czochralski method , which is essentially dislocation free because of the Dash necking from the seed, the mc‐Si inherently has grain boundaries and dislocations. The dislocations multiply easily, and this is mainly driven by the thermal stress generated during solidification, as well as the expansion stress due to the rigid crucible.…”

Section: Introductionmentioning

confidence: 99%

Development of high‐performance multicrystalline silicon for photovoltaic industry

Yang

Hsu

et al. 2013

Progress in Photovoltaics

222

107

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The low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so‐called high‐performance mc‐Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high‐performance mc‐Si. The key ideas behind this technology for defect control are discussed. With the high‐performance mc‐Si, we have achieved an average efficiency of near 17.8% and an open‐circuit voltage (Voc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low‐efficiency cells (<17%) were also very few. The power of the 60‐cell module using the high‐efficiency cells could reach 261 W as well. Copyright © 2013 John Wiley & Sons, Ltd.

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Section: Introductionmentioning

confidence: 99%

Development of high‐performance multicrystalline silicon for photovoltaic industry

Yang

Hsu

et al. 2013

Progress in Photovoltaics

222

107

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“…Using computer simulation instead, one can reproduce crystal growth process and forecast the physical phenomena quickly and economically, including thermal field, melt turbulence, gas convection, thermal stresses, etc., at varying operation and geometry conditions [2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Vasiliev and Budenkova [4] analyzed the effect of heat shield on the shape of solid-liquid interface and temperature field. Huang et al [5] improved the radiation shield (molybdenum and graphite with different coatings) and the side and bottom insulations, without sacrificing the crystal quality; significant reductions of power and argon consumption were achieved, and the pulling rate was increased. More importantly, the oxygen content in the grown crystals was greatly reduced leading to longer minority lifetime.…”

Section: Introductionmentioning

confidence: 99%

Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace

Zuo

Mazaev³

et al. 2010

Journal of Crystal Growth

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“…Both induction heating [3,4] and graphite resistance heaters [5,6] are applied in the CZ growth technique, selected based on various requirements such as cost efficiency, electromagnetic forces, or degree of purity inside the furnace. Numerical simulations have been applied for investigation of both concepts [4,6].…”

Section: Introductionmentioning

confidence: 99%

Model experiments for Czochralski crystal growth processes using inductive and resistive heating

Enders-Seidlitz

Pal

Dadzis

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The Czochralski (CZ) growth technique is widely applied in crystal growth, using both induction and resistance heaters. In this work, a novel model experiment platform with comprehensive in-situ measurement capability is introduced. Growth experiments with the model material tin applying both heating concepts are performed and analyzed, e.g., in terms of the maximum achievable crystal diameter. Strong asymmetries in the magnetic field of the induction heater are measured and temperature distribution on the resistance heater is found to be non-uniform. Furthermore, significant losses are observed in the power supplies of the resistance heater. The heating efficiency of both concepts is compared considering different insulation geometries. The obtained results show the capability of model experiments for design optimization and will provide valuable input for further validation of numerical simulations.

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On the hot-zone design of Czochralski silicon growth for photovoltaic applications

Cited by 35 publications

References 10 publications

Development of high‐performance multicrystalline silicon for photovoltaic industry

Development of high‐performance multicrystalline silicon for photovoltaic industry

Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace

Model experiments for Czochralski crystal growth processes using inductive and resistive heating

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