1980
DOI: 10.1002/pssa.2210570117
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On the interfacial processes at garnet LPE experiments

Abstract: L P E experiments are carried out by the horizontal dipping technique with axial rotation of plans Gd,Ga,O,, (GGG) substrates oriented by means of a n optical two-circle reflection goniometer. The measured growth rate of (YSm),(PeGa),O,, films as a function of the misorientation with respect to a singular { 110) plane in the range 0.05" 5 a & 13" shows an anisotropy depending nonlinearly on the angle. Surface kinetic coefficients are determined by separation of volume transport and interfacial processes. For 0… Show more

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Cited by 16 publications
(2 citation statements)
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“…Film thickness interference lines are seen by illuminating the film with Na-light. The film thickness depends on the local inclination angle of the surface with respect to the { llO} plane as was shown recently (HERGT, GORNERT 1978). Thus the sphericity of the substrate surface is reflected in the concentrical interference lines surrounding the (110) pole on the film surface.…”
Section: General Indications For a Lateral Growth Modementioning
confidence: 56%
“…Film thickness interference lines are seen by illuminating the film with Na-light. The film thickness depends on the local inclination angle of the surface with respect to the { llO} plane as was shown recently (HERGT, GORNERT 1978). Thus the sphericity of the substrate surface is reflected in the concentrical interference lines surrounding the (110) pole on the film surface.…”
Section: General Indications For a Lateral Growth Modementioning
confidence: 56%
“…The application of the BPS theory (1) seems to be inappropriate in this case. Under usual growth conditions one finds experimentally 6D/D = lo3 to lo4 s/cm [21]. The growth rates for garnet growth lie in the range R = 0 to cinls.…”
Section: ( 2 7 )mentioning
confidence: 90%