On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures

Franzosi, P.; Salviati, G.; Genova, F.; Stano, A.; Taiariol, F.

doi:10.1016/0167-577x(85)90132-6

Cited by 15 publications

(2 citation statements)

References 21 publications

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“…[ 5–7 ] However, these materials are typically grown by complex methods, including molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition, resulting in complicated manufacturing procedures and subsequent high cost. [ 8–12 ] Although evaporated Ge x Sn 1‐ x films have been explored as alternative materials for SWIR photodetectors, their practical applications are limited by the poor device performance, e.g., low specific detectivity. [ 13–15 ] Therefore, it remains challenging to develop novel material systems that can combine a simple preparation process and high device performance.…”

Section: Figurementioning

confidence: 99%

Evaporated Se_xTe_1‐_x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

et al. 2020

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Semiconducting absorbers in high‐performance short‐wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single‐crystalline germanium and III–V semiconductors. However, these materials require complex growth and device fabrication procedures. Here, thermally evaporated SexTe1‐x alloy thin films with tunable bandgaps for the fabrication of high‐performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of SexTe1‐x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of SexTe1‐x film‐based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al2O3 to enhance its absorption near the bandgap edge, the Se0.32Te0.68 film (an optical bandgap of ≈0.8 eV)‐based photoconductor exhibits a cut‐off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW−1 and implied detectivity of 6.5 × 1010 cm Hz1/2 W−1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se0.32Te0.68‐based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

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Section: Figurementioning

confidence: 99%

Evaporated Se_xTe_1‐_x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

et al. 2020

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“…[5][6][7] Most commercially available infrared detectors rely on epitaxially grown III-V and HgCdTe-based photodetectors, which require complex growth processes such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), resulting in high production costs and many manufacturing steps. 8 Therefore, there is an urgent need to develop optical absorbers to easily fabricate SWIR photodetectors and improve device performance.…”

Section: Introductionmentioning

confidence: 99%

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Chatterjee,

Nemoto,

Sun

et al. 2024

Nanoscale Horiz.

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High‐Speed Short Infrared Detector Based on Vertical Gr/Se_0.2Te_0.8/GaAs Heterojunction

Yang,

Yu,

Lian

et al. 2024

Laser & Photonics Reviews

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In the domain of high‐performance short‐wave infrared (SWIR) photodetection and imaging, existing technologies predominantly utilize single‐crystal germanium and III‐V semiconductors. Despite their efficacy, these materials are encumbered by laborious synthesis and complex fabrication demands. In this study, the synthesis of large‐area, high‐crystallinity Se0.2Te0.8 thin films through a CMOS‐compatible vacuum thermal evaporation process is reported. A high‐speed, broad‐spectrum photodetector engineered with an innovative Gr/Se0.2Te0.8/GaAs vertical heterostructure is presented, which capitalizes on the augmented carrier mobility and employs graphene innovatively as both a carrier collection interface and an electrode. This configuration facilitates a remarkably swift response time of 800 ns/1 µs at the crucial 1310 nm wavelength for optical communications. Moreover, the fabrication of a 5 × 5 array device demonstrates substantial SWIR imaging capabilities at ambient conditions, marking a paradigm shift in uncooled infrared imaging and communication technologies. This work not only extends the boundaries of SWIR photodetector performance but also underscores the potential of novel material systems in high‐speed optical applications.

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On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures

Cited by 15 publications

References 21 publications

Evaporated Se_xTe_1‐_x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

Evaporated Se_xTe_1‐_x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

High‐Speed Short Infrared Detector Based on Vertical Gr/Se_0.2Te_0.8/GaAs Heterojunction

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On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures

Cited by 15 publications

References 21 publications

Evaporated SexTe1‐x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

Evaporated SexTe1‐x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

High‐Speed Short Infrared Detector Based on Vertical Gr/Se0.2Te0.8/GaAs Heterojunction

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Product

Resources

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Evaporated Se_xTe_1‐_x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

Evaporated Se_xTe_1‐_x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

High‐Speed Short Infrared Detector Based on Vertical Gr/Se_0.2Te_0.8/GaAs Heterojunction