Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAsTunneling microscopy and spectroscopy on cross sections of molecularbeamepitaxygrown (Al)GaAs multilayers J. Vac. Sci. Technol. B 9, 779 (1991); 10.1116/1.585510 dc and ac transport in molecularbeamepitaxygrown metal/ZnSe/GaAs heterojunction structures Summary Abstract: Molecularbeam epitaxial growth of (Al,Ga) As/GaAs heterostructures with interruption at interfaces InxGa l _ xAs/GaAs single heterostructures have been grown by molecular-beam epitaxy with different growing rates and In molar fractions. Indium composition, layer thickness, and residual strain have been measured mainly by Rutherford backscattering/ channeling spectrometry and the results on selected samples compared with the results of other techniques like Auger electron spectroscopy and single-and double-crystal x-ray diffraction.Cathodoluminescence, x-ray topography, transmission electron microscopy, and ion dechanneling have been employed to observe dislocations and to characterize their nature and density. While the onset of misfit dislocations has been found to agree with the predictions of the equilibrium theory, the strain release has been found to be much lower than predicted and the results are compared with the available metastability or nucleation models. Present results are in best agreement with nucleation models. Moreover, annealing experiments show that these heterostructures are at (or very dose to) thermodynamic equilibrium. 1975
A Wireless Sensor Network based monitoring system was set-up, tested and is being deployed in 250 Telecom Italia Central Offices, in order to monitor and manage energy consumptions and to support energy saving policies. A thermodynamic model of the plants, based on a grey box approach, has been proved effective in supporting data analysis and in planning Energy Saving.
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