On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Rudenko, Tamara; Kilchytska, Valeriya; Arshad, Mohd Khairuddin; Raskin, J.-P.; Nazarov, A. M.; Flandre, Denis

doi:10.1109/ted.2011.2168226

Cited by 50 publications

(28 citation statements)

References 14 publications

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“…Discrete PT models developed by the Nanoscale Integrations and Modeling (NIMO) Group at Arizona State University (ASU) are employed to exemplify the outcomes [25]. e models are capable of capturing numerous second-order e ects to forecast the accurate device characteristics [29][30][31][32].…”

Section: Simulation Results and Validation Of The Proposed Methodsmentioning

confidence: 99%

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Swami¹,

Rai²

2017

Journal of Nanotechnology

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.reshold voltage (V TH ) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-o transition characteristics of the device. e governing gauge for e cient threshold voltage de nition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. e outcomes of extraction methods diverge from the exact values due to various short-channel e ects (SCEs) and nonidealities present in the device. A new approach to de ne and extract the real value of V TH of MOSFET is proposed in the manuscript. e subsequent novel enhanced SCE-independent V TH extraction method named "hybrid extrapolation V TH extraction method" (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are veri ed by extensive 2D TCAD simulation and con rmed analytically at various technology nodes.

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Section: Simulation Results and Validation Of The Proposed Methodsmentioning

confidence: 99%

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Swami¹,

Rai²

2017

Journal of Nanotechnology

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“…V th degradation has been inserted in V th0 transistor model parameter, used by the electrical simulator to compute the transistor threshold voltage. Empirical methods have been used to provide V th as a function of V th0 parameter to guarantee the correct degradation insertion [18,19]. A set of model cards have been created, each one representing a device with different V th .…”

Section: Simulation Resultsmentioning

confidence: 99%

BTI and HCI first-order aging estimation for early use in standard cell technology mapping

Butzen

Dal

Reis

et al. 2013

Microelectronics Reliability

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“…A specific example of a well known and commonly used auxiliary function is the Transconductance-to-Current Ratio (TCR) [50,[59][60][61][62][63][64][65][66][67]. This function consists of the ratio of the two successive differential operators defined by setting a = 1 in (12), as indicated below:…”

Section: The Transconductance-to-current Ratiomentioning

confidence: 99%

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

Sánchez

Ortíz‐Conde

Muci

et al. 2015

Microelectronics Reliability

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On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Cited by 50 publications

References 14 publications

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

BTI and HCI first-order aging estimation for early use in standard cell technology mapping

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

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