1992
DOI: 10.1088/0268-1242/7/1a/049
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On the nature of large-scale electrically active defect accumulations in InP and GaAs

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Cited by 8 publications
(14 citation statements)
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“…4͒. 11,12,14,[31][32][33][34][35][36][37][38][39] References 35 and 36 give the formulas for estimating energy level location from the LALS temperature dependencies…”
Section: Dependence Of Light Scattering On Sample Temperaturementioning
confidence: 99%
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“…4͒. 11,12,14,[31][32][33][34][35][36][37][38][39] References 35 and 36 give the formulas for estimating energy level location from the LALS temperature dependencies…”
Section: Dependence Of Light Scattering On Sample Temperaturementioning
confidence: 99%
“…The activation energies are evaluated with respect to the corresponding band ͑conduction or valence͒ depending on the conductance type assumed or determined for each kind of defects. 14,16,[35][36][37][38][39] Two steps observed in Ge correspond to two different point centers which freeze out at different sample temperatures, have different thermal activation energies, but contained in the same LSDAs.…”
Section: ͑11͒mentioning
confidence: 99%
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“…These procedures consist in the investigation of the light scattering with different wavelengths or measuring the dependencies of the light scattering intensity on sample temperature. 9,12,14,15 In addition, the latter procedure and the investigation of the influence of photoexcitation on light scattering intensity allows one to determine thermal and optical activation energies of point centers in LSDAs. 9,12 Moreover, LALS allows one to investigate large-scale recombination-active defects (LSRDs) and largescale gluing centers (LSGCs) discriminating between those in near-surface layers -including epilayers -and those in substrate bulk: the former are studied by use of the surface optical excitation, 16 while the latter are observed using the volume photoexcitation.…”
Section: Brief Descriptionmentioning
confidence: 99%
“…Refs. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] and references cited therein). We shall consider below some possible applications of LALS and techniques recently developed on its basis for solving some specific problems of material and structure testing in microelectronics.…”
Section: Introductionmentioning
confidence: 99%