1996
DOI: 10.1016/0921-4534(96)00125-6
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On the off stoichiometry of cerium oxide thin films deposited by RF sputtering

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Cited by 12 publications
(11 citation statements)
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“…As explained previously in Figure 1, greater the oxygen sites on the surface, the greater the tendency to form hydrogen bonds with interfacial water and hence higher the wettability. As seen in Figure 3(a), the O/Ce ratio on a freshly sputterdeposited ceria surface was measured as $3.0, which is similar to observations of Chin et al 51 Indeed, we observed that water spreads on a freshly sputter-deposited ceria surface as shown in Figure 3(c) given the higher-than-stoichiometric O/Ce ratio. However, when this surface was allowed to relax in a UHV environment, the O/Ce ratio approaches the stoichiometric ratio and the surface is rendered hydrophobic (WCA > 90 ) as shown in Figure 3(d).…”
supporting
confidence: 77%
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“…As explained previously in Figure 1, greater the oxygen sites on the surface, the greater the tendency to form hydrogen bonds with interfacial water and hence higher the wettability. As seen in Figure 3(a), the O/Ce ratio on a freshly sputterdeposited ceria surface was measured as $3.0, which is similar to observations of Chin et al 51 Indeed, we observed that water spreads on a freshly sputter-deposited ceria surface as shown in Figure 3(c) given the higher-than-stoichiometric O/Ce ratio. However, when this surface was allowed to relax in a UHV environment, the O/Ce ratio approaches the stoichiometric ratio and the surface is rendered hydrophobic (WCA > 90 ) as shown in Figure 3(d).…”
supporting
confidence: 77%
“…There are many factors that could potentially cause a departure from the pristine stoichiometric state of ceria. Chin et al 51 found that freshly sputter-deposited ceria films have an overstoichiometric O/Ce ratio on the surface, reaching as high as 3.3. They attributed this anomaly to cerium vacancies or interstitial excess oxygen on the surface arising from the sputtering process.…”
mentioning
confidence: 99%
“…The presence of excess oxygen in sputter-deposited oxide films has been observed before. Chin et al 14 reported the observation by RBS of cerium oxide films with an O/Ce ratio Ͼ2, for films deposited by rf sputtering. For sputterdeposited alumina deviations from stoichiometry were also observed.…”
Section: A Nature Of Trapping Centersmentioning
confidence: 99%
“…In order to match electronic conductivity of existing working electrode with the prepared electrode, fluorine is selected as a dopant for cadmium oxide [14]. Electron beam evaporation [15], chemical vapor deposition [16], RF sputtering [17] and spray pyrolysis [18,19] are some of the available methods used to deposit TCO thin film. Among the available methods, spray pyrolysis technique was chosen to prepare CdO:F TCO thin film based working electrode because of its cost effectiveness and better reproducibility [20].…”
Section: Introductionmentioning
confidence: 99%