On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Lederer, Maximilian; Olivo, Ricardo; Lehninger, David; Abdulazhanov, Sukhrob; Kämpfe, Thomas; Kirbach, S.; Mart, Clemens; Seidel, Konrad; Eng, Lukas M.

doi:10.1002/pssr.202100086

Cited by 75 publications

(81 citation statements)

References 37 publications

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“…This is in stark contrast to commonly investigated capacitor structures, which have been reported to consist of disc-shaped grains with ⟨100⟩ out-of-plane textures [7][8][9]. Furthermore, the polarisation hysteresis behaviour ranged from ferroelectric to strongly asymmetric antiferroelectric (AFE)-like behaviour [4,6]. Additionally, it has been reported that the interface layer is changing in thickness and chemical composition during the dopant activation and crystallisation anneal of the ferroelectric [4,5].…”

Section: Introductionmentioning

confidence: 75%

“…1c) behaves already ferroelectric at the beginning, the slope of the hysteresis becomes much steeper during wake-up, and can be therefore classified as non-split wake-up [6]. Samples annealed at lower temperatures on the other hand show an asymmetric wake-up [6]. Here, the pinching of the hysteresis is reduced with cycling, resulting in a more ferroelectric behaviour (see Fig.…”

Section: Resultsmentioning

confidence: 97%

“…While the sample annealed at 1000 • C (Fig. 1c) behaves already ferroelectric at the beginning, the slope of the hysteresis becomes much steeper during wake-up, and can be therefore classified as non-split wake-up [6]. Samples annealed at lower temperatures on the other hand show an asymmetric wake-up [6].…”

Section: Resultsmentioning

confidence: 97%

“…In consequence, this is expected to affect the wake-up behaviour of the hafnium oxide layer. This has recently been underlined by structural and electrical characterisation of silicon-doped HfO 2 (HSO) in metal-ferroelectric-insulator-semiconductor (MFIS) stacks [4][5][6]. These layers exhibited pronounced ⟨110⟩ and [111] out-of-plane textures for the ferroelectric orthorhombic phase as well as dendritically shaped grains [5].…”

Section: Introductionmentioning

confidence: 97%

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Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

et al. 2021

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Reliability is a central aspect of hafnium oxide-based ferroelectric field effect transistors (FeFETs), which are promising candidates for embedded non-volatile memories. Besides the device performance, understanding the evolution of the ferroelectric behaviour of hafnium oxide over its lifetime in FeFETs is of major importance for further improvements. Here, we present the impact of the interface layer in FeFETs on the cycling behaviour and retention of ferroelectric silicon-doped hafnium oxide. Thicker interfaces are demonstrated to reduce the presence of antiferroelectric-like wake-up effects and to improve endurance. However, they show a strong destabilisation of one polarisation state in terms of retention. In addition, measurements of the Preisach density revealed additional insight in the wake-up effect of these metal-ferroelectric-insulator-semiconductor (MFIS) capacitors. Graphic abstract

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Section: Introductionmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 97%

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Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

et al. 2021

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“…The first point can be explained by the asymmetric field distribution across the stack in the case of different interface layers surrounding the HZO. [48,49] For the targeted applications, the FE-TFTs must show FE plasticity (stable, partially switched polarization states) for programming at sub-coercive voltage conditions. The existence of these multi-state sub-loops has been directly observed for P-E measurements of MFM test structures (Figure 4b).…”

Section: Resultsmentioning

confidence: 99%

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays

Lehninger

Ellinger

Ali

et al. 2021

Adv Elect Materials

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Thin‐film transistors (TFTs) based on amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) have attracted vast attention for use in organic light‐emitting diode (AMOLED) displays due to their high electron mobility and large current on–off ratio. Although amorphous oxide semiconductors show considerably less threshold voltage (Vth) variation than poly‐silicon, large‐area processing and degradation effects can impede the characteristic parameters of a‐IGZO TFTs, which manifests in an uneven brightness distribution across the display panel. Such Vth variations are usually reduced by additional compensation circuits consisting of TFTs and capacitors. Herein, a new approach to compensate such variabilities is demonstrated: the integration of a programmable ferroelectric (FE) film in the gate stack of the TFT. This simplifies the complexity of the pixel cell and potentially minimizes the need for compensation circuits, which is crucial for transparent displays. To test this new approach, fully integrated FE‐TFTs (i.e., with vias contacting a structured bottom gate electrode from the top) based on a‐IGZO and FE hafnium‐zirconium oxide (HZO) are developed. A single low‐temperature post‐fabrication treatment at 350 °C for 1 h in air is used to simultaneously crystallize the HZO film in the FE phase and to reduce the number of defects in the a‐IGZO channel. The structural and electrical characterizations provide comprehensive guidance for the design of effective FE‐TFT gate stacks and device geometries. An accurate control of the polarization state and linear switching between multiple intermediate states is shown by using programming pulses of various amplitudes and widths. Furthermore, a direct correlation between the channel length and the applied pulse width for programming is observed.

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Application of Ferroelectrics

De,

Lederer,

Raffel

et al. 2023

Advanced Ultra Low‐Power Semiconductor Devices

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On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Abstract: Research data are not shared.

Cited by 75 publications

References 37 publications

Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays

Application of Ferroelectrics

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