On the radiation resistance of planar Gunn diodes with δ-doped layers

Obolenskaya, E. S.; Churin, A. Yu.; Obolensky, S. V.; Murel, A. V.; Shashkin, V. I.

doi:10.1134/s1063782615110160

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“…Due to the higher concentration of the impurity and the smaller formation of the radiation defects at the same neutron fluence, the output power of the planar Gunn diode is changing less than for the bulk diode [15].…”

Section: Resultsmentioning

confidence: 99%

Radiation hardness of subterahertz radiation source after neutron exposure

Ivanov¹,

Pavelyev

Obolensky

et al. 2022

Semiconductors

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The study of the radiation hardness of subterahertz radiation source from a Gunn diode oscillator and a multiplier, based on a semiconductor superlattice GaAs/AlAs was continued. The dependences of the output power on the frequency of a Gunn diode oscillator before and after neutron irradiation are experimentally measured. The dependence of the output power on the frequency of the source of subterahertz radiation to neutron radiation with fluences of 3.5·1012, 2.85·1013, 1014 cm-2 has been analytically estimated. Keywords: Radiation hardness, superlattice, Gunn diode, THz.

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Section: Resultsmentioning

confidence: 99%